Galaxycore Shanghai Limited Corporation

Marvellworld Trade Ltd.

Galaxcore Inc.

Utstarcom, Incorporated

Wochacha Information Technology (Shanghai) Co. Ltd.

Rusi Information Technology (Shanghai) Co., Ltd.

Lixin Zhao

Jie Li

Zhongxuan Zhang

Wenqiang Li

Wei Guo

Steve Xuefeng Jiang

Ze Xu

Yang Zhang

Yonggang Wang

Junqiang Lan

Yuhao Wen

Hongzhou Chen

Ziming Chen

Xinnan Hou

Hui Deng

Jingwei Wei

Huaizhao Li

A control method of a high gain image sensor is provided. A column bias current source and a column PMOS amplifier transistor are provided in a column signal readout unit, the column bias current source is connected to a column-common current output connecting line, a drain of the column PMOS amplifier transistor is connected to a column-common current input connecting line, and a gate of the column PMOS amplifier transistor is connected to the column-common current output connecting line, to acquire an amplified signal of a floating diffusion region of a readout row pixel unit on the column-common current input connecting line. An SHCG is achieved, and a dynamic range in a dark light scene is expanded. A device structure size in the column signal readout unit can be much larger than the transistor in the pixel, which results in better process consistency and more flexible adjustment of the conversion gain.

Control method of high gain image sensor

A method for forming a backside illuminated image sensor with a three-dimensional transistor structure is provided, where forming a gate of the three-dimensional transistor structure includes: forming a source follower transistor and/or a reset transistor with a three-dimensional transistor structure, wherein the source follower transistor and/or the reset transistor correspond to a protruding structure; and forming an insulating sidewall around the protruding structure, forming a groove between the insulating sidewall and a channel region of a transistor corresponding to the protruding structure, and forming a gate of the transistor in the groove, wherein the gate of the transistor is isolated by the insulating sidewall.

Backside illuminated image sensor with three-dimensional transistor structure and forming method thereof

The present invention discloses a CMOS image sensor structure and packaging method thereof. The method includes the following steps: providing an image sensor chip and a transparent package substrate that is ground and cut, the front side of the image sensor chip being provided with an image sensing region and a pad region surrounding the image sensing region; bonding a first end of a metal wire onto the pad, the other end being suspended outside the image sensor chip; bonding the transparent package substrate and the image sensor chip having the metal wire to form an image sensor package, which can be assembled by surface mount technology (SMT) or pressure welding via the exposed and suspended metal wire. In the present invention, an auxiliary substrate is optionally used and an optical glass is directly fixed to the image sensor chip, and the image sensor chip is directly connected to a circuit board. The image sensor products using this packaging method have better performance, reliability, and ultra-low packaging costs.

Image sensor structure and packaging method thereof

The present disclosure discloses a specific bar code and a forming method of the bar code, comprising: forming without a particular order on the printing stock: at least a one-dimensional bar code and color information and/or grayscale information in an area corresponding to the one-dimensional bar code, which are superimposed on the printing stock, respectively, wherein data information is generated by identifying the color information and the grayscale information; and if acquired by a portable electronic device having an image capture function, identifying the one-dimensional bar code and the color information and/or grayscale information, respectively, wherein a false positive ratio of identifying the one-dimensional bar code is less than 40%. By superimposing colorful background on the one-dimensional bar code, the present disclosure expands the coding capacity and implements one-code-for-one-article identification so as to bring additional values to vendors for applications such as traceability of one code for one article, while maintaining the features of one-dimensional bar code.

Specific bar code and forming method of the same

The present disclosure provides a control method for a camera module. The camera module comprises an imaging module, a sleeve module, a lens module which is mounted in the sleeve module and can move along an optical axis direction relative to the sleeve module, at least one coil, at least one magnetic component, and elastic components disposed between the lens module and the sleeve module. The method comprises: pressing the elastic components against the lens module, wherein a deformation of the elastic components perpendicular to the optical axis direction applies a radial positive pressure to the lens module, a frictional force in the optical axis direction is generated by the positive pressure on a contact surface of the elastic components and the lens module so that the frictional force can keep the lens module in a static state in the optical axis direction relative to the elastic components; and supplying current to the at least one coil, wherein the at least one coil or the at least one magnetic component optionally matches the lens module, and the lens module is subject to an electromagnetic force in the optical axis direction, the electromagnetic force acting as a driving force for the lens module to do rectilinear motion along the optical axis direction so as to drive the lens module to move.

Method for controlling a camera module, and associated camera module

A method for printing stock anti-counterfeiting by using a feature image and a corresponding system is disclosed. The method comprises obtaining a feature code for identifying a printing stock by recognizing a first feature of the feature image printed on the printing stock; searching for pre-recorded first anti-counterfeiting information of the printing stock; obtaining second anti-counterfeiting information of the printing stock by recognizing a second feature of the feature image printed on the printing stock; and comparing whether a similarity between the second anti-counterfeiting information and the first anti-counterfeiting information reaches a first match threshold value to determine whether the printing stock is true or false. The first anti-counterfeiting information is embodied as a distinguishable material feature of the printing stock in a feature image region or features of color, shape and position of the image printed in the feature image region.

Method and system for printing stock anti-counterfeiting by means of feature image

A backside illumination image sensor and a method for reducing a dark current of the backside illumination image sensor. The backside illumination image sensor comprises: a photodiode, a first conductive type isolated layer (); a gate structure of a pass transistor, corresponding to the first conductive type isolated layer () and formed on an upper surface of a first conductive type semiconductor substrate (), the gate structure () comprising: gate oxide (), a gate layer (), and a gate sidewall (), and the gate structure () correspondingly covering the photodiode; and a floating diffusion zone (), formed in the first conductive type semiconductor substrate () and having second conductive type heavy doping. In the backside illumination image sensor, a defect does not easily appear on a surface, right above the photodiode, of the first conductive type semiconductor substrate (), so that a dark current is effectively prevented from being produced.

Backside illumination image sensor and method for reducing dark current of backside illumination image sensor

An image sensor and a manufacturing method thereof are provided. The image sensor includes: a photo diode; a first-conductive-type isolating layer; a second-conductive-type lightly-doped region formed in the first-conductive-type semiconductor substrate; a first-conductive-type lightly-doped region formed under the second-conductive-type lightly-doped region, where the second-conductive-type lightly-doped region is isolated from the second-conductive-type region by the first-conductive-type lightly-doped region; a gate structure of a transfer transistor; and a floating diffusion region which is second-conductive-type heavily-doped. In the image sensor, the second-conductive-type lightly-doped region is formed to be connected with the floating diffusion region, thus, a distance between the floating diffusion region and the photo diode may be reduced which may enable photo-induced carriers to be transmitted from the photo diode to the floating diffusion region more rapidly, and further increase the transmission efficiency of the photo-induced carriers.

Image sensor and manufacturing method thereof

A dynamic random access memory (DRAM) and a production method, a semiconductor packaging component and a packaging method. The production method comprises: providing a memory wafer, the memory wafer being provided with a memory bare chip which is provided with a top metal layer which is provided with a power source bonding pad, a signal bonding pad, and a micro bonding pad, and an internal bus led out of the memory bare chip being electrically connected to the micro bonding pad; repairing the memory wafer; if a yield of the memory wafer is greater than or equal to a preset threshold, rearranging the micro bonding pad to form a butt-joint bonding pad which is electrically connected to the micro bonding pad and the power source bonding pad. A structure of the DRAM is not significantly changed, a data bandwidth of the DRAM is increased, and a high yield is ensured.

Dynamic random access memory (DRAM) and production method, semiconductor packaging component and packaging method

A phase detector includes a decimator to decimate a digitized in-phase signal and a digitized quadrature signal to N times a symbol rate, where N is an integer greater than one. A burst detector to detect bursts in an output of the decimator. A carrier offset block to determine an offset angle based on an output of the burst detector. A rotator to generate a rotated signal by rotating the output of the decimator based on the offset angle determined by the carrier offset block. An equalizer to perform coherent demodulation of the rotated signal.

Limiter based analog demodulator

A limiter based analog demodulator includes a power amplifier receiving a base-band signal and a local clock operating at the base-band frequency. A first multiplier receives an output from the power amplifier and the local clock to provide an in phase signal. A quadrature phase shifter receives the local clock and a second multiplier receives the output from the power amplifier and an output from the phase shifter to provide a quadrature signal. Analog filters receive the in phase and quadrature signals and analog to digital converters connected to the analog filters provide digitized in phase and quadrature signals. The phase detector then receives the digitized in phase and quadrature signals.

Pixel image sensors with lateral photodiode elements and vertical overflow drain systems. According to at least one embodiment of the present invention, an image sensor pixel includes a lateral photodiode element and a vertical overflow drain system for draining excessive charges accumulated in the charge collecting region of the lateral photodiode element and for resetting the charge collecting region of the lateral photodiode element.

Method and system for manufacturing a pixel image sensor

A digital to analog converter (DAC) for a communications system with reduced intersymbol interference incorporates dynamic element matching (DEM) with a matching element array having 2M bits for an input corresponding to M+1 levels thereby employing only one half the range of the DEM and array to produce the DAC output.

Digital to analog converter with integral intersymbol interference cancellation

An image sensor element includes a vertical overflow drain structure to eliminate substrate charge diffusion causing CMOS image sensor noise. An extra chemical mechanical polish step used to shorten the micro-lens to silicon surface distance in order to reduce optical cross talking. One embodiment uses N type substrate material with P&#x2212; epitaxial layer to form a vertical overflow drain. Deep P well implantation is introduced to the standard CMOS process to prevent latch-up between an N well to an N type substrate. A photo diode is realized by stacked N well/Deep N well and stacked P well/Deep P well to improve performance.

Growing community of inventors

Shanghai, China

Lixin Zhao