University of California

Samsung Electro-mechanics Co., Ltd.

Other

Kabushiki Kaisha Toshiba

Taiwan Semiconductor Manufacturing Comp. Ltd.

Masdar Institute of Science and Technology

Liwei Lin

Albert P Pisano

Roger T Howe

Firas Sammoura

Clark T-c Nguyen

Jong Woon Kim

Minyao Mao

Dane Christensen

Ongi Englander

Jongbaeg Kim

Sina Akhbari

Hsien-Wei Chen

Shin-Puu Jeng

An-Jhih Su

Hideyuki Funaki

Kazuhiko Itaya

Kazuhiro Suzuki

Hiroshi Yamada

Won Kyu Jeung

Tzu-Yu Wang

Heung Woo Park

Chi-Chun Hsieh

Kevin Limkrailassiri

Benjamin Eovino

Brian D Sosnowchik

Mu Chiao

Roseanne Warren

Kien-Bang Lam

Albert P Pigano

Armon Mahajerin

Piezoelectric transducers are provided. The piezoelectric transducer includes a first piezoelectric layer, a second piezoelectric layer disposed on at least a portion of the first piezoelectric layer, and a middle electrode layer disposed between the first and second piezoelectric layers, where the middle electrode layer includes an inner region and an outer region spaced apart from the inner region. Methods of making the piezoelectric transducers are also provided. The piezoelectric transducers and methods find use in a variety of applications, including devices, such as electronics devices having one or more (e.g., an array) of the piezoelectric transducers.

Piezoelectric transducers and methods of making and using the same

A device includes a piezoelectric diaphragm positioned on a frame. A fixed portion of the diaphragm is fixed relative to the frame and an active portion of the diaphragm is not fixed relative to the frame. The active portion of the diaphragm surrounds the fixed portion of the diaphragm and/or has a boundary with a concave shape.

Sonic transducer having a piezoelectric diaphragm on a frame

A method to a fabricate high surface area, high performance supercapacitor includes include applying a metal layer to at least a portion of a nanostructure; after applying the metal layer, oxidizing the metal layer; applying a plurality of additional metal layers onto a previously oxidized metal layer; and after applying each additional metal layer, oxidizing the additional metal layer prior to applying a successive additional metal layer. The metal layers may include a composition comprising at least one metal, the at least one metal selected from the group consisting of ruthenium, titanium, manganese, vanadium, iron, tin, cobalt and nickel. Optionally, each of the additional metal layers may be applied using atomic layering deposition (ALD).

Fabrication of enhanced supercapacitors using atomic layer deposition of metal oxide on nanostructures

After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.

Semiconductor device and method of manufacturing the same

Disclosed herein is an inertial sensor. The inertial sensor includes: a plurality of driving masses; support bodies connecting a connection bridge so as to support the driving masses; a connection bridge connecting the plurality of driving masses and connecting the plurality of driving masses with the support bodies; and an electrode pattern part including driving electrodes simultaneously driving the driving masses and sensing electrode detecting axial Coriolis force of each of the driving masses.

Inertial sensor and angular velocity detection method using the same

An inertial sensor includes a plate-like substrate layer, a mass body, a support frame, a limit stop extending in the central direction of the mass body from the support frame, and a detection unit detecting the displacement of the displacement part. The inertial sensor adopts the limit stop limiting the downward displacement of the mass body to prevent the support portion of the mass body from being damaged.

Inertial sensor

An under-bump metallization (UBM) structure for a semiconductor device is provided. The UBM structure has a center portion and extensions extending out from the center portion. The extensions may have any suitable shape, including a quadrangle, a triangle, a circle, a fan, a fan with extensions, or a modified quadrangle having a curved surface. Adjacent UBM structures may have the respective extensions aligned or rotated relative to each other. Flux may be applied to a portion of the extensions to allow an overlying conductive bump to adhere to a part of the extensions.

Radiate under-bump metallization structure for semiconductor devices

Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano- to micro-integration.

Localized synthesis and self-assembly of nanostructures

An actively tunable waveguide-based iris filter having a first part including a first portion of a deformable iris filter cavity having an inlet and an outlet; a second part operatively coupled with the first part and including a second portion of the deformable iris filter cavity having a deformable membrane operatively coupled with the first portion of a deformable iris filter cavity; the first portion and the second portion together forming the deformable iris filter cavity of the tunable waveguide-based iris filter; and means for moving the deformable membrane, whereby movement of the deformable membrane changes the geometry of the deformable iris filter cavity for causing a change in the frequency of a signal being filtered by the filter. The tunable filter is fabricated using a MEMS-based process including a plastic micro embossing process and a gold electroplating process. Prototype filters were fabricated and measured with bandwidth of 4.05 GHz centered at 94.79 GHz with a minimum insertion loss of 2.37 dB and return loss better than 15 dB. A total of 2.59 GHz center frequency shift was achieved when membranes deflected from &#x2212;50 &#x3bc;m to +150 &#x3bc;m.

Waveguide-based MEMS tunable filters and phase shifters

A bonding technique suitable for bonding a non-metal body, such as a silicon MEMS sensor, to a metal surface, such a steel mechanical component is rapid enough to be compatible with typical manufacturing processes, and avoids any detrimental change in material properties of the metal surface arising from the bonding process. The bonding technique has many possible applications, including bonding of MEMS strain sensors to metal mechanical components. The inventive bonding technique uses inductive heating of a heat-activated bonding agent disposed between metal and non-metal objects to quickly and effectively bond the two without changing their material properties. Representative tests of silicon to steel bonding using this technique have demonstrated excellent bond strength without changing the steel's material properties. Thus, with this induction bonding approach, silicon MEMS devices can be manufacturably bonded to mechanical steel components for real time monitoring of the conditions/environment of a steel component.

Bonding a non-metal body to a metal surface using inductive heating

A microfabricated actuator of the vertical comb-drive (AVC) type or staggered vertical comb-drive type for torsional or linear applications includes torsion springs which permit self-aligned deformation of the device (micromirror) structure of the actuator through the heating of the torsional springs to plasticity. The torsional springs can include perpendicular-beam springs or double folded beams which allow axial movement of the spring when heated. Heating of the springs can be by bulk heating of the actuator structure or by Joule heating to the torsional springs by passing an electrical current therethrough.

Microfabricated vertical comb actuator using plastic deformation

Systems and methods for local synthesis of silicon nanowires and carbon nanotubes, as well as electric field assisted self-assembly of silicon nanowires and carbon nanotubes, are described. By employing localized heating in the growth of the nanowires or nanotubes, the structures can be synthesized on a device in a room temperature chamber without the device being subjected to overall heating. The method is localized and selective, and provides for a suspended microstructure to achieve the thermal requirement for vapor deposition synthesis, while the remainder of the chip or substrate remains at room temperature. Furthermore, by employing electric field assisted self-assembly techniques according to the present invention, it is not necessary to grow the nanotubes and nanowires and separately connect them to a device. Instead, the present invention provides for self-assembly of the nanotubes and nanowires on the devices themselves, thus providing for nano-to micro-integration.

A miniaturized microbial fuel cell is described deriving electrical power from the biological activity of microbes, typically the metabolism of glucose by baker's yeast. Microfabrication techniques are used to miniaturize the components as well as the overall fuel cell and are capable of integration with other biomedical and implantable devices. Substantial reductions in both the size and the cost of implantable systems are thereby achievable. Electrode structures are used that facilitate electron transfer and power production giving favorable power densities in a miniature fuel cell. In addition, the microbial fuel cell of the present invention extracts glucose or other metabolite(s) from the ambient body fluids as its fuel, thus achieving a renewable, long-term power source for implantable biomedical devices.

Implantable, miniaturized microbial fuel cell

A method of fabricating a microstructure is disclosed. The method includes providing a substrate for forming an interface region and an elongated portion extending away from the interface region. A patterned, non-planar etchable structure is formed on one side of the elongated portion of the substrate. An unetchable membrane layer is deposited atop the etchable structure. At least one etching hole is formed in the membrane layer. The etchable structure is etched by placing an etchant into the etching hole to form a cavity underneath the membrane layer, thereby producing a shaft.

Growing community of inventors

Castro Valley, CA, United States of America

Liwei Lin