Air Products and Chemicals, Inc.

Tokyo Electron Limited

Versum Materials Us, LLC

Liu Yang

Manchao Xiao

Xinjian Lei

Bing Han

Mark Leonard O'Neill

Kirk Scott Cuthill

Eugene Joseph Karwacki, Jr

Hansong Cheng

Iain Buchanan

Kazuhide Hasebe

Paul Higginbotham

Vincent White

Thomas R Gaffney

Masato Yonezawa

Heather Regina Bowen

John Eugene Palamara

Masanobu Matsunaga

Thomas Richard Gaffney

The power required to recover Chydrocarbons from crude carbon dioxide comprising Chydrocarbons and hydrogen sulfide may be reduced by distilling the crude carbon dioxide to produce carbon dioxide-enriched overhead vapor and Chydrocarbon-enriched bottoms liquid such that the hydrogen sulfide is rejected with the overhead vapor. Power consumption reductions may be achieved by incorporating a heat pump cycle using carbon dioxide vapor as working fluid to provide at least a part of the refrigeration duty and using a side reboiler to reduce the bottom reboiler duty. Where the bottoms liquid is further processed to produce 'lighter' and 'heavier' hydrocarbon fractions, the process enables optimization of upgrading crude oil on the basis of API gravity, Reid Vapor pressure and/or viscosity.

Process for recovering hydrocarbons from crude carbon dioxide fluid

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Low temperature deposition of silicon-containing films

This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Binary and ternary metal chalcogenide materials and method of making and using same

Described herein are methods of forming dielectric films comprising silicon, such as, but not limited to, silicon oxide, silicon oxycarbide, silicon carbide, and combinations thereof, that exhibit at least one of the following characteristics: low wet etch resistance, a dielectric constant of 6.0 or below, and/or can withstand a high temperature rapid thermal anneal process. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Dielectric films comprising silicon and methods for making same

Described herein are methods of forming dielectric films comprising silicon, oxide, and optionally nitrogen, carbon, hydrogen, and boron. Also disclosed herein are the methods to form dielectric films or coatings on an object to be processed, such as, for example, a semiconductor wafer.

Methods to prepare silicon-containing films

Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Method of making a multicomponent film

Described herein are methods to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:

Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes

The present invention is a process of making a germanium-antimony-tellurium alloy film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silyltellurium precursor is used as a source of tellurium for the alloy film and is reacted with an alcohol during the deposition process.

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Yorba Linda, CA, United States of America

Liu Yang