Seeya Optronics Co., Ltd.

Semiconductor Manufacturing (Shanghai) International Corporation

Semiconductor Manufacturing (Beijing) International Corporation

Honor Device Co., Ltd.

Zhengzhou New Century Materials Genome Institute Co., Ltd

Liu Lu

Jiang Li

Yi Wei

Guokai Chen

Liu Bo

Jin Yi

Niu Lei

Ji Deng Feng

Zhang Qing

Qiu Sunjie

Guosheng Shao

Peng Zhang

Zixuan Li

Provided are an augmented reality optical module, including a first lens, a second lens, a third lens group, a first polarization modulation unit provided on a side of the third lens group and configured to modulate the light emitted by the image source into first circularly polarized light, an angle selection film provided on a first surface of one side of the first lens and configured to reflect light having an incidence angle greater than or equal to a first angle and transmit light having an incidence angle smaller than or equal to a second angle, and a second polarization modulation unit provided on the other side of the first lens and configured to modulate incident circularly polarized light into linearly polarized light.

Augmented reality optical module

A semiconductor structure and a method for forming same, the forming method including: providing a base, where a dummy gate structure is formed on the base, an interlayer dielectric layer is formed on the base the dummy gate structure exposes, and the interlayer dielectric layer exposes the top of the dummy gate structure; forming an isolation structure in the interlayer dielectric layer between adjacent dummy gate structures, where the isolation structure further extends into the base; after forming the isolation structure, removing the dummy gate structure and forming a gate opening in the interlayer dielectric layer; filling a gate electrode material into the gate opening, where the gate electrode material further covers the top of the interlayer dielectric layer; and performing at least one polishing treatment to remove the gate electrode material above the top of the interlayer dielectric layer and retaining the gate electrode material in the gate opening as a gate electrode layer, where the step of the polishing treatment includes: performing first polishing treatment using a metal polishing liquid; and performing second polishing treatment using deionized water. With the second polishing performance, the probability of forming a residue of the gate electrode material on the top surface of the interlayer dielectric layer is reduced, thereby improving device performance.

Semiconductor structure and method for forming same

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Shanghai, China

Liu Lu