Kabushiki Kaisha Toshiba

Lisa Sugiura

Hidetoshi Fujimoto

Mariko Suzuki

Johji Nishio

Kazuhiko Itaya

John Rennie

Shinya Nunoue

Masayuki Ishikawa

Hideto Sugawara

Masahiro Yamamoto

Masaaki Onomura

In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dry etching, insufficient current injection, and the need for a high current density, a nitride compound semiconductor light emitting device has current blocking layers made of n-type B,In,Al,Ga,N (0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;z&lE;1) single crystal containing an oxide of a predetermined metal, carbon and impurities exhibiting p-type and n-type conductivity, or i-type B,In,Al,Ga,N (0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;z&lE;1) single crystal in which carriers are inactivated by hydrogen or oxygen to realize an internal current blocking structure without the need for dry etching. By applying a reverse bias voltage, the semiconductor can be activated only along a current path, and the remainder region is utilized as a current blocking layer. When the n-side electrode has a unique three-layered structure, a reduction in contact resistance and good wire bonding are promised.

Nitride compound semiconductor light emitting device

The present invention provides a nitride system semiconductor device which decreases in cost and improves productivity without heat treatment after the growth and which increases lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In,Ga,Al,B,N,P,As,(0&lE;x, 0&lE;y 0&lE;z, 0&lE;x&plus;y&plus;z&lE;1, 0<m, 0&lE;n, 0<m&plus;n&lE;1) layer, a p-type In,Ga,Al,B,N,P,As,(0&lE;x, 0&lE;y, 0&lE;z, 0&lE;x&plus;y&plus;z&lE;1, 0<m, 0<n, 0<m&plus;n&lE;1) layer, and an electrode,formed on a substrate. The oxygen concentration of the surface of the p-type In,Ga,Al,B,N,P,As,layer is 5&times;10,cm,or lower.

Nitride system semiconductor device and method for manufacturing the same

A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationship

Compound semiconductor device formed of nitrogen-containing gallium

Nitride-based semiconductor element comprises a first layer, a mask formed on the first layer and has a plurality of opening portions, a nitride-based compound semiconductor layer formed on the mask, the nitride-based compound semiconductor layer including a first region having threading dislocations produced in such a manner that, in approximately a middle portion between two adjacent ones of the plurality of opening portions in the mask, a plurality of dislocations extend in a vertical direction to a surface of the mask, and a second region which comprises portions other than the middle portions and free from the dislocations, and a desired element structure formed on the semiconductor layer.

Nitride-based semiconductor element and method for manufacturing the same

The present invention provides a nitride system semiconductor device which decreases cost and improves productivity without heat treatment after the growth and which increases in lifetime and reliability by enhancing the quality of a p-type conductive layer, and a method for manufacturing the nitride system semiconductor device. The nitride system semiconductor device has a multilayer structure of an n-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0&lt;m, 0.ltoreq.n, 0&lt;m+n.ltoreq.1) layer, a p-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n (0.ltoreq.x, 0.ltoreq.y, 0.ltoreq.z, 0.ltoreq.x+y+z.ltoreq.1, 0&lt;m, 0.ltoreq.n, 0&lt;m+n.ltoreq.1) layer, and an electrode 22 formed on a substrate. The oxygen concentration of the surface of the p-type In.sub.x Ga.sub.y Al.sub.z B.sub.1-x-y-z N.sub.m P.sub.n As.sub.1-m-n layer is 5.times.10.sup.18 cm.sup.-3 or lower.

Growing community of inventors

Kawasaki, Japan

Lisa Sugiura