Kopin Corporation

Other

Lisa P Allen

Paul M Zavracky

Duy-Phach Vu

John C Fan

Jagdish Narayan

Ngwe K Cheong

Richard H Morrision, Jr

Michael W Batty

Thomas P Ford

A lighting system includes a bag that has an outer wall and the outer wall has an inside surface. A lighting unit is removably attached to the bag and the lighting unit is positioned on the inside surface of the outer wall. The lighting unit is selectively actuatable to emit light downwardly in the bag with respect to the lighting unit and laterally in the bag with respect to the lighting unit. Thus, the lighting unit illuminates an interior of the bag thereby facilitating contents of the bag to be found in darkness.

Lighting system

An improved method of zone-melting recrystallizing of a silicon film on an insulator in which the film is implanted and annealed to achieve a reduction of the density of defects within the film.

Zone-melting recrystallization process

A method and apparatus for reducing branching, reducing defects, and improving the overall surface morphology of silicon on insulator (SOI) structures produced by Zone Melting and Recrystallization (ZMR) is described. A special heater for use in preparing SOI structures formed by ZMR comprises a graphite mass having corrugations extending along one or more side walls and which may be periodic. The heater provides concentrated regions of heat which vary periodically across the length of the molten zone of the SOI structure. Alternatively, the heater comprises a stationary lower heater member upon which the wafer is placed and a movable upper heater member having corrugations. ZMR is achieved by translating the corrugated upper heater member past the wafer. In yet another alternative, a well known strip heater having a uniformly shaped movable upper member is improved by replacing the upper member with a movable upper heater member having corrugations.

Method and apparatus for reducing defects in SOI structures

A method for reducing defects after zone melting and recrystallization of semiconductor films formed on an insulator over a semiconductor substrate by selectively removing portion of a first layer over the semiconductor film, amorphizing the exposed film portion and laterally regrowing the amorphized region.

An improved method of forming seed openings for zone-melting and recrystallization of polysilicon film on an insulator over silicon (SOI) is described. This method comprises forming a narrow discontinuous pattern of seed openings formed by an overlapping sub-pattern of discontinuous shaped openings. Alternatively, in an edge bead seed embodiment, a resist is removed from an SOI precursor structure, comprising an insulator on an Si wafer, thus exposing the peripheral edge of the insulator. The exposed insulator is then also removed to provide a peripheral edge seed opening to the underlying Si wafer.

Seeding process in zone recrystallization

An improved method of zone-melting and recrystallizing of polysilicon film on an insulator over silicon is described.

Growing community of inventors

Norton, MA, United States of America

Lisa P Allen