University of Florida Research Foundation, Incorporated

Lisa McElwee-White

Timothy J Anderson

Carlos Gilberto Ortiz

Omar J Bchir

Christopher O'Donohue

K Randall McClain

Steven W Johnston

Embodiments of the invention are directed to a method of preparing a WN, WNC, WNO, and WNCOsolid by the deposition of a WNprecursor at a temperature below 300&#xb0; C. The WNprecursor is a tungsten nitrido complex. The deposition can be carried out using a tungsten nitrido complex as a single-source metal organic precursor. In an embodiment of the invention, the deposition can be performed to form a plurality of WN, WNC, WNO, WNCOnanoparticles.

Tungsten nitrido precursors for the CVD of tungsten nitride, carbonitride, and oxide films

Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula L W(NR)X , where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and L and X are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.

MOCVD of WNx thin films using imido precursors

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Gainesville, FL, United States of America

Lisa McElwee-White