International Business Machines Corporation

Lisa M Studzinski

Subhash Laxman Shinde

David B Goland

Benjamin V Fasano

Lester W Herron

Robert Hannon

Gregory M Johnson

Richard A Bates

Andrew Michael Reitter

Carla Natalia Cordero

Rao Venkateswara Vallabhaneni

Ajay Prabhakar Giri

Rajesh Bhikhubhai Patel

Herbert I Stoller

Paul Robert Walling

Daniel P O'Connor

Richard A Shelleman

John Ulrich Knickerbocker

David Clifford Long

Sundar M Kamath

Sundar Mangalore Kamath

Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.

Method for the controlling of certain second phases in aluminum nitride

A process for fabricating a microelectronic structure. The process comprises processing a metal carrier having a top surface and a bottom surface, wherein the top surface and the bottom surface are processed to promote adhesion, forming a dielectric layer around the metal carrier, wherein the dielectric layer substantially covers the top surface and the bottom surface of the metal carrier, and applying a first patterned layer of conductive material to the microelectronic structure. In one preferred embodiment, the process further comprises comprising sintering the metal carrier, the dielectric layer, and the first patterned layer of conductive material. In one preferred embodiment, the process further comprises forming a via hole through the metal carrier before the forming of the dielectric layer around the metal carrier, wherein the forming of the dielectric layer comprises forming the dielectric layer inside the via hole.

Structure and process for making substrate packages for high frequency application

A high performance TF-ceramic module for mounting integrated circuit chips thereto and a method of fabricating the module at reduced cost. The substrate includes thin film (TF) layers formed directly on a layered ceramic base. A first thick film wiring layer is formed on or embedded in a top surface of the thick film layered ceramic base using thick film techniques. A first dielectric layer of a polyimide or other organic material, or an insulating material different than the ceramic material is formed on top of the first wiring layer. The dielectric layer may be spun on or sprayed on and baked; vapor deposited; laminated to the ceramic base; or an inorganic layer may be deposited using plasma enhanced chemical vapor deposition (PECVD). Vias are formed through the first dielectric layer. A second wiring layer is formed on the first dielectric layer. A second dielectric layer is formed on the second wiring layer. At least one mounting location suitable for mounting an electronic component is formed on the second dielectric layer. The substrate may be attached a printed circuit board by direct attachment, pin grid array (PGA), land grid array (LGA), ball grid array (BGA), column grid array (CGA) and miniBGA on the bottom layer of the ceramic base.

Direct deposit thin film single/multi chip module

Method for controlling of certain second phases in aluminum nitride

A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably yttrium-barium-copper-oxide and is encased within a noble metal such as silver or gold when forming the surface circuitry or filling of the vias. The noble metal layers preferably have through-openings to enable direct connection of circuitry to the encased superconductor layer. A method is also provided for fabricating such multilayer ceramic substrate electronic components.

Multi-layer glass ceramic module with superconductor wiring

A high performance TF-ceramic module for mounting integrated circuit chips thereto and a method of fabricating the module at reduced cost. The substrate includes thin film (TF) layers formed directly on a layered ceramic base. A first thick film wiring layer is formed on or embedded in a top surface of the thick film layered ceramic base using thick film techniques. A first dielectric layer of a polyimide or other organic material, or an insulating material different than the ceramic material is formed on top of the first wiring layer. The dielectric layer may be spun on or sprayed on and baked; vapor deposited; laminated to the ceramic base; or an inorganic layer may be deposited using plasma enhanced chemical vapor deposition (PECVD). Vias are formed through the first dielectric layer. A second wiring layer is formed on the first dielectric layer. A second dielectric layer is formed on the second wiring layer. At least one mounting location suitable for mounting an electronic component is formed on the second dielectric layer. The substrate may be attached a printed circuit board by direct attachment, pin grid array (PGA), land grid array (LGA), ball arid array (BGA), column grid array (CGA) and miniBGA on the bottom layer of the ceramic base.

Multi-layer ceramic substrate having high TC superconductor circuitry

A method and apparatus for flattening a ceramic body comprised primarily of an aluminum nitride system having a liquid phase additive necessary for low temperature sintering during a firing thereof is disclosed. The ceramic body is referred to as an aluminum nitride multilayer ceramic (AlN MLC). The method and apparatus include a support tile having a first coating on a contact surface thereof, the AlN MLC for being placed upon the contact surface of the support tile. A load flattening tile having a second coating on a contact surface thereof is provided, the load flattening tile for being placed with its coated surface upon and in contact with the AlN MLC. Lastly, a furnace is provided for heating the support tile, AlN MLC, and load flattening tile at temperatures greater than 1500.degree. C. for an amount of time necessary to flatten the ceramic body to a desired degree of flatness, wherein the first coating and the second coating of the support tile and the load flattening tile, respectively, react with the AlN MLC for quenching the liquid phase of the ceramic body to prevent a sticking of the support tile and the load flattening tile to the AlN MLC during a flattening process.

Method for flat firing aluminum nitride/tungsten electronic modules

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Wappingers Falls, NY, United States of America

Lisa M Studzinski