Micron Technology Incorporated

Lisa M Clampitt

Roger W Lindsay

Matthew J King

Shawn D Lyonsmith

Darwin A Clampitt

John David Hopkins

Indra V Chary

Anilkumar Chandolu

Kevin Y Titus

Christopher R Ritchie

Martin Jared Barclay

Pavithra Natarajan

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatus includes a first conductive contact; a second conductive contact; levels of conductive materials stacked over one another and located over the first and second conductive contacts; levels of dielectric materials interleaved with the levels of the conductive materials, the levels of conductive materials and the levels of dielectric materials formed a stack of materials; a first conductive structure located on a first side of the stack of materials and contacting the first conductive contact and a first level of conductive material of the levels of conductive materials; and a second conductive structure located on a second side of the stack of materials and contacting the second conductive contact and a second level of conductive material of the levels of conductive materials.

Method for manufacturing a memory structure having stacked data lines and conductive structures on sides thereof

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first deck located over a substrate, and a second deck located over the first deck, and pillars extending through the first and second decks. The first deck includes first memory cells, first control gates associated with the first memory cells, and first conductive paths coupled to the first control gates. The second conductive paths include second conductive pads located on a first level of the apparatus over the substrate. The second deck includes second memory cells, second control gates associated with the second memory cells, and second conductive paths coupled to the second control gates. The second conductive paths include second conductive pads located on a second level of the apparatus. The first and second conductive pads having lengths in a direction perpendicular to a direction from the first deck to the second deck.

Memory device including multiple decks of memory cells and pillars extending through the decks

Semiconductor device having a stack of data lines with conductive structures on both sides thereof

Growing community of inventors

Boise, ID, United States of America

Lisa M Clampitt