Xiamen Sanan Integrated Circuit Co., Ltd.

Liqin Qiu

Babu Dayal Padullaparthi

Pohan Chen

Jiarui Fei

A vertical-cavity surface-emitting laser (VCSEL) device includes a substrate, first and second-type doped distributed Bragg reflectors, first and second electrodes, an active layer, a surface relief layer having a surface relief indentation of a diameter (d) ranging from 1.0-6.0 um, and a confinement member defining an aperture with a diameter (d) ranging from 3.0-15 &#x3bc;m. The second electrode is a ring-shaped p-contact metal having an inner diameter (d) ranging from 8-17 &#x3bc;m. The VCSEL device has a mesa structure that has a bottom mesa diameter (d) ranging from 16-28 &#x3bc;m. The diameters satisfy the relation of d&#x3e;d&#x3e;d&#x3e;d. The surface relief layer has a thickness equaling to n/4 times a wavelength of a laser beam generated by the active layer with n being positive even numbers.

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Xiamen, China

Liqin Qiu