Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Beijing Boe Technology Co., Ltd.

Liping Luo

Zengbiao Sun

Huishuang Liu

Mingxuan Liu

Tao Wang

Xiaoxiang Zhang

Kiyong Kim

Chaoqin Xu

Huali Yao

Huibin Guo

Haichen Hu

Wei Li

Qiang Wang

Xi Chen

Zhenfei Cai

Shuai Hou

Zhaohui Hao

Zhichao Zhang

Jie Zhao

Jeong Hun Rhee

Xiangnan Yun

Su Min

Jinwei Shi

Donghui Qi

Zhenshan Li

Shaoshuai Mu

Guangming Lu

Mingliang Zhao

Ziqing Zhou

Ki Yong Kim

The present disclosure provides an organic light emitting display panel, a method for manufacturing the same, and a display device thereof. The organic light emitting display panel includes a substrate, a first electrode located on the substrate, a light emitting layer located on a side of the first electrode away from the substrate, a second electrode located on a side of the light emitting layer away from the first electrode, and a polarization reflective layer located between the substrate and the first electrode or located on a side of the second electrode away from the light emitting layer.

Organic light emitting display panel, method for manufacturing the same and display device thereof

The present application provides an array substrate and a method for manufacturing the same, and a display device including the array substrate, the array substrate includes a substrate, and a gate drive circuit and a common electrode line arranged above the substrate, the gate drive circuit and the common electrode line are arranged adjacent to each other, and at least one groove is provided in the common electrode line. In the application, by forming the groove in the common electrode line, flow of the developing solution from the common electrode line to the gate drive circuit can be effectively suppressed, so as to solve the problem that the channel is broken in the thin film transistor of the gate drive circuit due to nonuniform distribution of the developing solution.

Array substrate and method for manufacturing the same, and display device

The present disclosure provides a shift register unit, a gate scanning circuit, a driving method, and a display apparatus. The shift register unit comprises a reset circuit configured to transmit a signal from a signal control terminal to a first node and a shift register unit signal output terminal under the control of a reset control signal input terminal; a first pull-down control circuit configured to transmit the signal from the signal control terminal to the first node and the shift register unit signal output terminal under the control of a second node; and a second pull-down control circuit configured to transmit the signal from the signal control terminal to the first node and the shift register unit signal output terminal under the control of a third node control signal input terminal coupled to a third node, so as to cooperate with the reset circuit and the first pull-down control circuit to jointly reset the shift register unit in a phase in which output of the shift register unit should not occur, thereby effectively preventing output of the shift register unit from occurring in the phase in which output of the shift register unit should not occur.

Shift register units, gate scanning circuits, driving methods and display apparatuses

A manufacturing method of a metal layer, a functional substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of a metal layer includes: forming an insulating layer on a base substrate; forming an etching buffer layer on the insulating layer; patterning the etching buffer layer and the insulating layer to form a plurality of recessed microstructures in the insulating layer; stripping the etching buffer layer; and forming a metal layer on the insulating layer, a surface of the metal layer adjacent to the insulating layer is formed with a plurality of protruded portions which are filled into the plurality of recessed microstructures. The manufacturing method of a metal layer may form a metal layer with anti-reflection effect.

Manufacturing method of metal layer, functional substrate and manufacturing method thereof, and display device

The present disclosure provides an array substrate, a manufacturing method thereof, a repairing method thereof, a display panel and a display device. The array substrate includes a base substrate, and a pixel electrode and a common electrode superimposed one on another on the base substrate. An electrically conductive layer is arranged at a region where the pixel electrode and the common electrode overlap each other. The electrically conductive layer is at least insulated from one of the pixel electrode and the common electrode.

Array substrate, manufacturing method thereof, repairing method thereof, display panel and display device

Disclosed is an array substrate, a method for manufacturing the same, and a display device. The array substrate includes: a base substrate and a plurality of data lines disposed on the base substrate. The base substrate comprises a plurality of attaching areas in which the end of each data line attaches to the base substrate, and non-attaching areas between each two adjacent attaching areas, and a height layer is disposed between a passivation layer and the base substrate in the non-attaching area. By interposing a height layer between the passivation layer and the base substrate in the non-attaching area, the height difference between the passivation layer in the attaching area and the non-attaching area is decreased or disappeared, then the problem of fall-off of the passivation layer is solved, and the reliability of the product is increased.

Array substrate, method for manufacturing thereof, and display device

A display substrate and a display device are provided. The display substrate includes: plural gate lines each having at least one end provided with plural first electrostatic discharge (ESD) units configured to discharge static electricity in the gate lines. The plural first ESD units have curvatures different from each other. By discharging the static electricity through the plural ESD units, in case one of the ESD units is broken down by electrostatic current, the other ones can continue working.

Display substrate and manufacturing method thereof, display device

Embodiments of the present disclosure disclose a thin film transistor, a fabrication method thereof, a repair method thereof, and an array substrate. The thin film transistor comprises a gate electrode (), a gate insulating layer (), an active layer (), a source electrode () and a drain electrode (). The source electrode () comprises a first source electrode portion () and a second source electrode portion () independent from each other, the first source electrode portion () and the second source electrode portion () are electrically connected with the active layer (), respectively; and/or, the drain electrode () comprises a first drain electrode portion () and a second drain electrode portion () independent from each other, the first drain electrode portion () and the second drain electrode portion () are electrically connected with the active layer (), respectively.

Thin film transistor, fabrication method thereof, repair method thereof and array substrate

A mask, including a transparent substrate and mask patterns formed on a surface of the transparent substrate, wherein the mask patterns include a first area for forming film patterns in a display area and a second area for forming film patterns in a non-display area; both the first area and the second area are provided with a plurality of patterned sub-masks; a distribution density of the patterned sub-masks in the first area is less than a distribution density of the patterned sub-masks in the second area; each patterned sub-mask includes a first pattern for forming a source electrode of a transistor, a second pattern for forming a drain electrode of the transistor, and a slit interposed between the first pattern and the second pattern; and a width of the slit in the first area is greater than a width of the slit in the second area.

Mask, manufacturing method thereof and exposure system

A developing device includes a spraying assembly and a concentration regulating assembly. A developing method usable in the developing device includes: spraying developing agents by a spraying assembly onto respective developing regions on a substrate to be developed; and spraying a regulating liquid by a concentration regulating assembly onto a target developing region on the substrate to be developed to change concentration of the developing agents.

Developing method and developing device

A detection device and a detection method are disclosed in the embodiments. The detection device comprises a light source, a first image information acquisition unit, a first charge coupled device (CCD), a first light splitter, and a first analyzer. The first image information acquisition unit is configured to receive a first light signal from the light source and transmit the first light signal onto a substrate, and to acquire a first image light signal generated by transmitting the first light signal onto both an edge of a first ID figure on the substrate and an edge of the substrate, and transmit the first image light signal to the first light splitter; the first light splitter is configured to transmit the first image light signal to the first CCD so that the first CCD outputs a first electrical signal; and the first analyzer is configured to receive the first electrical signal outputted from the first CCD and analyze wave crests of the first electrical signal, thereby obtaining a distance between the edge of the first ID figure on the substrate and the edge of the substrate. The detection part and detection method are used for substrate detection.

Detection device and method

The invention relates to the technical field of an alignment method, and discloses a method for aligning substrate and mask, including: firstly forming at least one set of alignment marks on a mask plate; selecting a certain number of large-size substrates as sample substrates; forming a plurality of sets of alignment marks on each sample substrate using the mask plate and the at least one set of alignment marks formed thereon to divide the sample substrate into a plurality of sub-substrate areas; and then performing mask process on the respective sample substrates, accurate alignment for each sub-substrate area can be realized by means of the plurality of sets of alignment marks on the sample substrate, and one sub-substrate area can be accurately aligned by means of at least two sets of alignment marks formed on the sample substrate. In the alignment, positions of the plurality of sets of alignment marks formed on the sample substrate are recorded and stored, and mask process on a non-sample substrate is performed based on parameters relating to the stored positions of the plurality of sets of alignment marks, thus the seaming degree between patterns in the same layer and the coincidence degree between patterns in different layers on the non-sample substrate are guaranteed, so that mass production for large-size substrates with good quality can be realized. The invention also discloses a method for preparing semiconductor device.

Growing community of inventors

Beijing, China

Liping Luo