Applied Materials Israel Limited

Lior Levin

Gilad Almogy

Vicky Svidenko

Chris Talbot

A method and system for defect localization includes: (i) receiving a test structure that includes at least one conductor that is at least partially covered by an electro-optically active material; (ii) providing an electrical signal to the conductor, such as charge at least a portion of the conductor; and (iii) imaging the test structure to locate a defect.

System and method for defect localization on electrical test structures

Grain size variations within a copper film are quantified by analyzing an SEM image of a portion of the copper film, determining an approximate total length of grain boundaries within the SEM image, and calculating a grain boundary density based on the approximate total length of the grain boundaries and the area of the copper film represented in the SEM image. The calculated grain boundary density allows for correlating plating and anneal process parameters, as well as electrical and reliability performance.

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Cupertino, CA, United States of America

Lior Levin