Centre National De La Recherche Scientifique

Universitat De Valéncia

Lionel Salmon

Laurent Malaquin

Jean-Francois Letard

Christian Bergaud

Azzedine Bousseksou

Christophe Vieu

Saioa Cobo

Gabor Molnar

José Antonio Real Cabezos

Philippe Demont

Jean-Pierre Tuchagues

Jerôme Menegotto

Lionel Rechignat

Carlos Quintero

Karl Ridier

Jérôme Menegotto

Jean-François Bât I12G1 Letard

This application relates to a process for the application of thin layers of substantially pure spin transition molecular materials while maintaining the hysteresis properties of the material. The process makes it possible to obtain a dense uniform surface with very low roughness.

Process for the application of spin transition molecular materials in thin layers

A molecular memory including a substrate made of silicon; a set of condensers, each condenser including two conductive layers constituting armatures of the condensers and between which is placed a dielectric layer; and a connector to provide electric contacts with external circuits, wherein the dielectric layer comprises at least partially a polymer containing triazole derivatives, a spin transition phenomenon support material or a spin transition molecular complex; and a method for manufacturing a molecular memory including covering a substrate with a conductive layer; coating a dielectric material on the conductive layer; covering the dielectric material with the conductive layer; impregnating by immersion a buffer in an inking solution of hexadecanethiol; drying and washing the impregnated buffer; creating a protective monolayer on the conductive layer by application of the impregnated, dried and washed buffer; and creating a chemical etching on the sample.

Molecular memory and method for making same

Growing community of inventors

Carcassonne, France

Lionel Salmon