Stmicroelectronics(tours) Sas

Lionel Jaouen

Samuel Menard

Arnaud Yvon

A device includes a diode. The anode of the diode includes first, second, and third areas. The first area partially covers the second area and has a first doping level greater than a second doping level of the second area. The second area partially covers the third area and has the second doping level greater than a third doping level of the third area. A first insulating layer partially overlaps the first and second areas.

Thin diodes

A thyristor is formed from a vertical stack of first, second, third, and fourth semiconductor regions of alternated conductivity types. The fourth semiconductor region is interrupted in a gate area of the thyristor. The fourth semiconductor region is further interrupted in a continuous corridor that extends longitudinally from the gate area towards an outer lateral edge of the fourth semiconductor region. A gate metal layer extends over the gate area of the thyristor. A cathode metal layer extends over the fourth semiconductor region but not over the continuous corridor.

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St Cyr sur Loire, France

Lionel Jaouen