Massachusetts Institute of Technology

Intel Corporation

Fujifilm Corporation

Lucent Technologies Inc.

Leland Stanford Junior University

California Institute of Technology

Cornell University

University of Rochester

Lionel Cooper Kimerling

Kazumi Wada

Jurgen Michel

Anuradha Murthy Agarwal

Desmond Rodney Lim

Jifeng Liu

Juejun Hu

Kevin Kidoo Lee

Michal Lipson

Dong Pan

Hermann A Haus

Wojciech P Giziewicz

Donghwan Ahn

Shoji Akiyama

Daniel Knight Sparacin

Luca Dal Negro

Yasha Yi

Yukiya Miyachi

Jun-Fei Zheng

Ning-Ning Feng

Kevin M Chen

Yan Cai

Sajan Saini

Douglas D Cannon

John Dimitris Joannopoulos

Shanhui Fan

Karen K Gleason

Chee Wei Wong

Tian Gu

Derek Kita

Christina Manolatou

Junying Li

Rodolfo E Camacho-Aguilera

James S Foresi

Jonathan T Bessette

Michelle L Clark

Debra M Koker

Yasuhiko Ishikawa

Hsin-Chiao Luan

Victor Trinh Nguyen

Marcie R Black

Anu M Agarwal

Eveline Postelnicu

Jae Hyung Yi

Samarth Aggarwal

Fleur Jacolien Fok

Xiaoman Duan

Edward Hartley Sargent

Pradip Kumar Roy

Harry A Atwater

Michael Robert Watts

Yi Ma

Milos A Popovic

Steven G Johnson

Mark Luitzen Brongersma

Caroline Anne Ross

Xiaochen Sun

Gerald Francis Dionne

Andrea Ivano Melloni

John A Yasaitis

George B Kenney

Philippe M Fauchet

Thomas L Koch

Gregg Sumio Higashi

Carlos Angulo Barrios

Francesco Morichetti

Eleanor L Haus, Legal Representative

Antonio Canciamilla

Paul A Maki

James F McMillan

Pao Tai Lin

Stefano Grillanda

Lei Bi

Rong Sun

John Lock

Jean Francois Viens

Leslie S S Loo

Michal Lispon

Noriaki Toyoda

Milov Popovic

Drew Michael Weninger

Vivek Raghunathan

Samuel Serna

Vivek Singh

Peng Jiang

Dong Hun Kim

Mon-Fen Hong

Jianfei Wang

Michael D Sockin

Lirong Zeng

A layer of amorphous Ge is formed on a substrate using electron-beam evaporation. The evaporation is performed at room temperature. The layer of amorphous Ge has a thickness of at least 50 nm and a purity of at least 90% Ge. The substrate is complementary metal-oxide-semiconductor (CMOS) compatible and is transparent at Long-Wave Infrared (LWIR) wavelengths. The layer of amorphous Ge can be used as a waveguide in chemical sensing and data communication applications. The amorphous Ge waveguide has a transmission loss in the LWIR of 11 dB/cm or less at 8 &#x3bc;m.

Amorphous germanium waveguides for spectroscopic sensing and data communication applications

Optical interconnects can offer higher bandwidth, lower power, lower cost, and higher latency than electrical interconnects alone. The optical interconnect system enables both optical and electrical interconnection, leverages existing fabrication processes to facilitate package-level integration, and delivers high alignment tolerance and low coupling losses. The optical interconnect system provides connections between a photonics integrated chip (PIC) and a chip carrier and between the chip carrier and external circuitry. The system provides a single flip chip interconnection between external circuitry and a chip carrier using a ball grid array (BGA) infrastructure. The system uses graded index (GRIN) lenses and cross-taper waveguide couplers to optically couple components, delivers coupling losses of less than 0.5 dB with an alignment tolerance of &#xb1;1 &#x3bc;m, and accommodates a 2.5&#xd7; higher bandwidth density.

Simultaneous electrical and optical connections for flip chip assembly

In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5&#xd7;10cmthrough the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2&#xd7;10cm.

Method for high-concentration doping of germanium with phosphorous

An apparatus for generating a spectral image includes a filter to receive incident light. The filter has a variable refractive index. The apparatus also includes a modulator, operably coupled to the filter, to modulate the variable refractive index of the filter so as to generate a plurality of optical patterns from the incident light. The plurality of optical patterns represents the spectral image and each optical pattern in the plurality of optical patterns corresponds to a different modulation of the variable refractive index. The apparatus further includes a detector, in optical communication with the filter, to detect the plurality of optical patterns.

Methods and apparatus for spectral imaging

In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

High-concentration active doping in semiconductors and semiconductor devices produced by such doping

In a photonic waveguide, there is provided an undercladding layer and a waveguide core, having a cross-sectional height and width, that is disposed on the undercladding layer. The waveguide core comprises a waveguide core material having a thermo-optic coefficient. A refractive index tuning cladding layer is disposed on top of the waveguide core. The refractive index tuning cladding layer comprises a refractive index tuning cladding material having an adjustable refractive index and an absorption length at a refractive index tuning radiation wavelength. A thermo-optic coefficient compensation cladding layer is disposed on top of the refractive index tuning cladding layer. The thermo-optic coefficient compensation cladding layer comprises a thermo-optic coefficient compensation material having a thermo-optic coefficient that is of opposite sign to the thermo-optic coefficient of the waveguide core material. The thermo-optic coefficient compensation cladding layer provides at least partial compensation for the waveguide core thermo-optic coefficient.

Athermal photonic waveguide with refractive index tuning

A chip-scale, air-clad semiconductor pedestal waveguide can be used as a mid-infrared (mid-IR) sensor capable of in situ monitoring of organic solvents and other analytes. The sensor uses evanescent coupling from a silicon or germanium waveguide, which is highly transparent in the mid-IR portion of the electromagnetic spectrum, to probe the absorption spectrum of fluid surrounding the waveguide. Launching a mid-IR beam into the waveguide exposed to a particular analyte causes attenuation of the evanescent wave's spectral components due to absorption by carbon, oxygen, hydrogen, and/or nitrogen bonds in the surrounding fluid. Detecting these changes at the waveguide's output provides an indication of the type and concentration of one or more compounds in the surrounding fluid. If desired, the sensor may be integrated onto a silicon substrate with a mid-IR light source and a mid-IR detector to form a chip-based spectrometer.

Methods and apparatus for mid-infrared sensing

A patterned nonreciprocal optical resonator structure is provided that includes a resonator structure that receives an optical signal. A top cladding layer is deposited on a selective portion of the resonator structure. The top cladding layer is patterned so as to expose the core of the resonator structure defined by the selective portion. A magneto-optically active layer includes a magneto-optical medium being deposited on the exposed core of the resonator structure so as to generate optical non-reciprocity.

Patterned non-reciprocal optical resonator

An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped.

Electrically pumped extrinsic semiconductor optical amplifier with slot waveguide

A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.

Engineering emission wavelengths in laser and light emitting devices

A multispectral pixel structure is provided that includes a plurality of stacked cavity arrangements for emitting or detecting a plurality of specified wavelengths, wherein each stacked cavity arrangement having a photoactive layer for spectral emission or detection of one of the specified wavelengths. The photoactive layer is positioned within a resonant cavity stack and the resonant cavity stack being positioned between two adjacent mirror stacks. A plurality of coupling-matching layers are positioned between one or more of the stack mirror arrangements for controlling optical phase and coupling strength between emitted or incident light and resonant modes in each of the stacked cavity arrangements.

Cavity-enhanced multispectral photonic devices

An optoelectronic device includes an input waveguide structure that receives an input optical signal. A GeSi/Si waveguide structure receives from the input waveguide the input optical signal and performs selective optoelectronic operations on the input optical signal. The GeSi/Si waveguide structure outputs an optical or electrical output signal associated with the selective optoelectronic operations performed on the input optical signal. An output waveguide structure receives the output optical signal from the GeSi/Si waveguide structure and provides the optical output signal for further processing.

High speed and low loss GeSi/Si electro-absorption light modulator and method of fabrication using selective growth

An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions.

Photoconductors for mid-/far-IR detection

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Concord, MA, United States of America

Lionel Cooper Kimerling