Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Linrong Cai

Shaohua Huang

Xiaoqiang Zeng

Lixun Yang

Jianfeng Yang

Shao-hua Huang

Liqin Zhu

Poyang Chang

Shuangliang Liu

Kuowei Ho

A light-emitting device includes a number (N) (not smaller than two) of light-emitting units, a interconnect structure connecting the light-emitting units in series, first and second electrodes, and an auxiliary electrode structure. The light-emitting units each having an light-emitting stack having first and second semiconductor layers of opposite doping types and an active layer. The first and second electrodes are respectively connected to the first semiconductor layer of a first light-emitting unit and the second semiconductor layer of an Nlight-emitting unit. The auxiliary electrode structure is connected to the light-emitting stack of at least one of the light-emitting units.

Light-emitting device and method for making the same

A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.

Light-emitting diode chip and ultraviolet light-emitting device including the same

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Xiamen, China

Linrong Cai