Plasma-therm, Inc.

Mks Inc.

Linnell Martinez

Russell Westerman

David Pays-Volard

Gordon M Grivna

Chris Johnson

David J Johnson

Rich Gauldin

Dwarakanath Geerpuram

Thierry Lazerand

Jason Michael Doub

Ken Mackenzie

Peter Falvo

Leslie Michael Lea

David Miller

Michael Morgan

David Johnson

Russelll Westerman

Grivna Gordon

A RF power generation system includes a power source configured to generate a periodic waveform applied to a load and a controller configured to receive at least one of a voltage signal or a current signal indicating a respective voltage and current applied to an electrode of the load. The controller determines a surface potential of a workpiece in the load in accordance with the at least one of the voltage signal or the current signal and a series capacitance of the electrode. The controller further determines an ion potential in accordance with an approximation of the surface potential. The periodic waveform may be one of a pulsed DC waveform, a RF waveform, or a pulsed RF waveform.

Non-invasive IED estimation for pulsed-DC and low frequency applications

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

Method and apparatus for plasma dicing a semi-conductor wafer

The present invention provides a method for using ion filtering to adjust the number of ions delivered to a substrate. The method comprising a process chamber being provided that is operatively connected to a plasma source. The substrate is provided on a substrate support that is provided within the process chamber. An electrical bias source is provided that is operatively connected to an aperture plate that is provided in the process chamber. The substrate on the substrate support is processed using a plasma generated using the plasma source. A variable bias voltage from the electrical bias source is applied to the aperture plate during the plasma processing of the substrate. The plasma processing of the substrate can further comprise exposing the substrate to a plasma time division multiplex process which alternates between deposition and etching on the substrate.

Ion filter using aperture plate with plurality of zones

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step.

Method for dicing a substrate with back metal

The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma.

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Lakeland, FL, United States of America

Linnell Martinez