Semiconductor Manufacturing International (Shanghai) Corporation

Semiconductor Manufacturing International (Beijing) Corporation

Zhucheng Haotian Pharm Co., Ltd.

Linlin Sun

Bo Su

Xuefeng Mei

Jianrong Wang

Liping Zhu

Jianxin Gu

Liye Lu

A semiconductor device and its fabrication method are provided. The method includes forming a core layer on a first region of a base substrate layer; forming sidewall spacer layers on sidewalls of two sides of the core layer along a first direction; forming a filling layer on a second region between adjacent sidewall spacer layers which are arranged along the first direction; forming a first dividing trench in the filling layer on the second region to divide the filling layer along a second direction, where sidewalls of the first dividing trench, arranged along the first direction, expose corresponding sidewall spacer layers; forming a second dividing trench in the core layer to divide the core layer along the second direction; forming a second dividing layer in the second dividing trench when forming a first dividing layer in the first dividing trench; and removing the filling layer and the core layer.

Semiconductor device and fabrication method thereof

The present invention relates to crystalline forms of pyrroloquinoline quinone disodium salt. The present invention provides crystalline Form A and crystalline Form B of pyrroloquinoline quinone disodium salt, and the methods and uses for the preparation thereof. The X-ray powder diffraction patterns of crystalline Form A and crystalline Form B are as shown by FIG.and FIG., respectively. The crystalline forms of the present invention have low moisture absorption and high stability, as well as excellent use and storage performances.

Crystalline forms of pyrroloquinoline quinone disodium salt

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Shanghai, China

Linlin Sun