Micron Technology Incorporated

Lining He

Charles H Dennison

Gordon A Haller

Hongbin Zhu

Anish A Khandekar

Brett D Lowe

Brian J Cleereman

Some embodiments include a method of forming vertically-stacked memory cells. An opening is formed through a stack of alternating insulative and conductive levels. Cavities are formed to extend into the conductive levels along sidewalls of the opening. At least one of the cavities is formed to be shallower than one or more others of the cavities. Charge-blocking dielectric and charge-storage structures are formed within the cavities. Some embodiments include an integrated structure having a stack of alternating insulative and conductive levels. Cavities extend into the conductive levels. At least one of the cavities is shallower than one or more others of the cavities by at least about 2 nanometers. Charge-blocking dielectric is within the cavities. Charge-storage structures are within the cavities.

Integrated structures and methods of forming vertically-stacked memory cells

Integrated structures

Growing community of inventors

Singapore, Singapore

Lining He