Toshiba Techno Center Inc.

Kabushiki Kaisha Toshiba

Bridgelux Incorporated

Ling Zhang

Steven D Lester

Jeff Ramer

Jun Wu

Jeffrey C Ramer

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits light when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

LED with improved injection efficiency

A light emitting device and method for making the same is disclosed. The light-emitting device includes an active layer sandwiched between a p-type semiconductor layer and an n-type semiconductor layer. The active layer emits lights when holes from the p-type semiconductor layer combine with electrons from the n-type semiconductor layer therein. The active layer includes a number of sub-layers and has a plurality of pits in which the side surfaces of a plurality of the sub-layers are in contact with the p-type semiconductor material such that holes from the p-type semiconductor material are injected into those sub-layers through the exposed side surfaces without passing through another sub-layer. The pits can be formed by utilizing dislocations in the n-type semiconductor layer and etching the active layer using an etching atmosphere in the same chamber used to deposit the semiconductor layers without removing the partially fabricated device.

A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits.

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San Jose, CA, United States of America

Ling Zhang