Macronix International Co., Ltd.

Ling Wuu Yang

Tuung Luoh

Kuang-Chao Chen

Ta-Hung Yang

Yung-Tai Hung

Chun Chiang

Kuang Chao Chen

Yukai Huang

Chun Min Cheng

An integrated circuit includes a multilayer stack, and a plurality of layered conductors extending in the multilayer stack and into a conductor layer beneath the multilayer stack. The layered conductor has a bottom conductor layer in ohmic electrical contact with the conductive layer in a substrate, an intermediate conductive liner layer over the bottom conductor layer and lining a portion of sidewall of the corresponding trench, and a top conductor layer on the top conductive liner layer.

Integrated circuit device with layered trench conductors

Semiconductor structures and methods of fabricating semiconductor structures are disclosed. The method comprises the steps of: providing an initial semiconductor structure; forming a non-silicon layer overlying the initial semiconductor structure, the non-silicon layer having an extinction coefficient greater than zero at wavelengths below about 300 nanometers; and performing a plasma-based process to form a layer overlying the non-silicon layer, the non-silicon layer preventing the ultraviolet radiation generated during the plasma-based process from damaging the initial semiconductor structure.

Ultraviolet blocking layer

Growing community of inventors

Hsinchu, Taiwan

Ling Wuu Yang