Honeywell International Inc.

Shanghai Tianma Micro-electronics Co., Ltd.

Shanghai Ic R&d Center Co., Ltd

Shanghai Integrated Circuit Equipment & Materials Industry Innovation Center Co., Ltd

Shanghai Huachang Environmental Protection Co., Ltd.

Chengdu Tianma Micro-electronics Co., Ltd.

Research Institute of Nanjing Chemical Industrial Group

Engineering Technology Research Center, Fushun Mining Group Co., Ltd.

Ling Shen

Ya Qun Liu

Liqiang Zhang

Kai Zhang

Jianxin Wen

Feng Qin

Jian Zhao

Hualin Wang

Yu Jiang

Huifeng Duan

Jiangang Wang

Huijie Yan

Haigang Kang

Xin Cui

Wei Jun Wang

Yanhong Zhang

Zhidan Su

Zhifang Li

Hui Wang

Yuan Wx Li

Xin Zhang

Ying Zhao

Hong Min Huang

Qiang Yang

Yuhang Zhao

Jiebin Duan

Xi Zeng

Songbai Mao

Jianping Li

Changming Pi

Yuan Huang

Yi Fan

Liquan Li

Chonggang Chen

Qian Zeng

Qisong Shen

Ning Ye

Yongli Qian

Mingfu Bao

Dasong Xing

Da Zhao

Rongpu Zhang

Limei Cui

Linmei Dong

Yaqin Mao

A single-layered linear neural network based on a cell synapse structure comprising a pre-synapse and a post-synapse, the pre-synapse comprises a plurality of precursor resistors, number of the precursor resistors is m, one end of the precursor resistors in the pre-synapse is jointly connected with an intermediate point, and another end of the precursor resistors is respectively connected with each of a plurality of precursor signal input ends, number of the precursor signal input ends is m; the precursor signal input ends are used for receiving input voltages; the post-synapse comprises a plurality of posterior resistors, number of the precursor resistors is n, one end of the posterior resistors in the post-synapse is jointly connected with the intermediate point, and another end of the posterior resistors is respectively connected with each of a plurality of posterior signal output ends, number of the posterior signal output ends is n; the posterior signal output ends are used for outputting currents. The invention provides a single-layered linear neural network based on cell synapse structure, which can reduce the number of resistors; in addition, a weight between an external precursor neuron and an external posterior neuron can be changed only by adjusting two variable resistors or one of the two variable resistors.

Single-layered linear neural network based on cell synapse structure

The present invention disclosures a memory array structure, comprising an array composed of multiple memory devices arranged in rows and columns, each of the rows is set with a row leading-out wire, and each of the columns is set with a column leading-out wire, memory devices are correspondingly positioned at intersection points of each row leading-out wire and each column leading-out wire; wherein, the first terminal of each of the memory devices is individually connected to the row leading-out wire of the same row, and the second terminal of each of the memory devices is connected to a first terminal of a switch in the same column, the second terminal of the switch is connected to the column leading-out wire of the same column; wherein, each of the rows is set with one to multiple the switches, and the first terminal of each of the switches is connected to one to all of the second terminals of the memory devices in the same column. The advantage of the present invention is that the corresponding analog currents output of input signals of different specified rows according to multiply-accumulate operation requirements of each of the columns can be obtained simultaneously, thus multiply-accumulate operations of different input signals of different scales can be performed, which greatly improves operation speed and using efficiency of the array.

Memory array structure

The disclosure discloses a CMOS image sensor, which includes a plurality of image sensor units and a resistance-to-digital converting unit. Each image sensor unit includes a pixel unit and a resistive random access memory unit connected to the pixel unit, the pixel unit is configured to convert a received optical signal into an analog signal and the resistive random access memory unit is configured to convert the analog electrical signal into a resistance value. The resistance-to-digital converting unit is connected to the plurality of the image sensor units, and is configured to convert the resistance value into a digital signal. The resistive random access memory unit is adopted in the present disclosure to replace a transistor device and is configured to convert resistance information of the resistive random access memory unit into a digital signal and output. Thus, digital quantization of image information is completed.

CMOS image sensor, image sensor unit and signal transmission methods therefor

The present disclosure provides thermal interface materials that are useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks. The thermal interface material is soft and has elastic properties post-curing along with high thermally conductive filler loading. The thermal interface material includes at least one long chain alkyl silicone oil; at least one long chain, vinyl terminated alkyl silicone oil; at least one long chain, single end hydroxyl terminated silicone oil; at least one thermally conductive filler, at least one coupling agent, at least one catalyst, at least one crosslinker, and at least one addition inhibitor.

Gel-type thermal interface material with low pre-curing viscosity and elastic properties post-curing

Provided are a display panel and a display device. Along a column direction of the matrix, adjacent N rows of sub-pixels form a pixel unit group, N scanning lines of a same pixel unit group are electrically connected, and sub-pixels of the same pixel unit group are electrically connected to different data lines; a length of a first edge of the sub-pixel along the column direction of the matrix is smaller than a length of a second edge along a row direction; along the column direction of the matrix, adjacent N sub-pixels form a pixel unit; among N switch transistors of a same pixel unit, orthographic projections of at least two switch transistors on a preset plane at least partially overlap; among N data lines of the same pixel unit, an orthographic projection of at least one data line overlaps an orthographic projection of at least one pixel electrode.

Display panel and a display device

The disclosure provides a voltage-controlled magnetic anisotropic magnetic random access memory. The memory comprises a virtual array, a memory array and a peripheral circuit, wherein the memory array comprises memory cells with X rows and Y columns; the virtual array comprises virtual cells with X rows and one column; the peripheral circuit comprises at least one data sampling-decision-output circuit, the data sampling-decision-output circuit comprises a sensitive amplifier circuit and a logic circuit in series, and are simultaneously connected to the data sampling-decision-output circuit in the peripheral circuit at the same time. By changing the width-length ratio of a differential circuit in the sensitive amplifier circuit and adding the virtual array, the problem that the storage state of the voltage-controlled magnetic anisotropy magnetic random access memory cannot be determined is effectively solved, and the risk of resistance deviation under different process conditions also can be avoided.

Voltage-controlled magnetic anisotropic magnetic random access memory and storage state determining method therefor

A thermal interface material that is useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks. The thermal interface material comprises at least one silicone oil, at least one catalyst, at least one thermally conductive filler having a larger surface area, a solvent, at least one inhibitor, and at least one crosslinker. The at least one thermally conductive filler reduces the oil leakage of the TIM, and the solvent increases the flow rate of the TIM without negating the reduction of oil leakage realized by the thermally conductive fillers.

Gel-type thermal interface material

Liquid crystal display panel and liquid crystal display device are provided. A liquid crystal display panel includes a first substrate, a second substrate, and a liquid crystal layer there-between. The first substrate includes a first base substrate, and gate lines and data lines, on the first base substrate and defining a plurality of sub-pixels. The second substrate includes a second base substrate. At least one heating sensor is disposed between the first and second base substrates. A non-display area includes a first non-display area, disposed around a display area, and a second non-display area, disposed around the first non-display area. Each heating sensor includes at least one sub-sensor and two sensor terminals, including a first and second sensor terminal, respectively connected to two ends of the at least one sub-sensor. At least one of the at least one sub-sensor is disposed in the first non-display area.

Liquid crystal display panels and liquid crystal display devices

A liquid-crystal display panel and a liquid-crystal display device are provided. The display panel includes a display region and a non-display region surrounding the display region. The display panel also includes a first base including a first substrate, and a plurality of gate lines, a plurality of data lines, and a plurality of sub-pixels disposed in the display region. Moreover, the display panel includes a second base including a second substrate, and a liquid-crystal layer disposed between the first base and the second base. In addition, the display panel includes a heating power terminal disposed in the non-display region and including a first heating power terminal for outputting a high voltage and a second heating power terminal for outputting a low voltage. Further, the display panel includes at least one heating electrode disposed between the first substrate and the second substrate and used to heat the liquid-crystal layer.

Liquid-crystal display panel and display device thereof

A thermal interface structure for electronic devices, such as telecommunications or data networking hardware, that utilize optical transceiver modules which are inserted within cage receptacles of the electronic devices. In order to provide for efficient heat transfer, the thermal interface structure is disposed between, and in abutment with, the optical transceiver module and a heat sink associated with the cage receptacle. The thermal interface structure includes a thermal interface layer including a phase change material, and a polymer layer connected to the thermal interface layer.

Thermal interface structure for optical transceiver modules

A thermal interface material that is useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks. The thermal interface material includes at least one silicone oil, and at least one thermally conductive filler.

The present disclosure provides a two component releasable thermal gel that is useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks. The two component releasable thermal gel is mixed before the point of application and facilitates catalytic cross-linking. The thermal gel includes a first component including a primary silicone oil, an inhibitor, a catalyst, and at least one thermally conductive filler, and a second component including a primary silicone oil, a cross linking silicone oil, and at least one thermally conductive filler, wherein the ratio of total content of Si&#x2014;H groups to total content of vinyl groups in the thermal gel is between 0.03 to 10. The thermal gel is releasable from a substrate upon which the thermal gel is applied.

Releasable thermal gel

The present disclosure provides thermal interface materials that are useful in transferring heat from heat generating electronic devices, such as computer chips, to heat dissipating structures, such as heat spreaders and heat sinks. The thermal interface material also includes a coloring agent selected from the group consisting of: an iron based inorganic pigment; and an organic pigment.

Thermal interface materials including a coloring agent

A thermal interface material includes, in one exemplary embodiment, a polymer, a phase change material, a first thermally conductive filler having a first particle size, and a second thermally conductive filler having a second particle size. The first particle size is larger than the second particle size. A formulation for forming a thermal interface material and an electronic component including a thermal interface material are also provided.

High performance thermal interface materials with low thermal impedance

The invention relates to a process and a device for treating a catalyst discharged from bubbling bed hydrogenation of residual oil. Provided is a process for treating a catalyst discharged from bubbling bed hydrogenation of residual oil, comprising the following steps: (1) adjustment and control to reduce viscosity; (2) desorption and separation by rotational flow; and (3) separation and resource utilization of an oil-water-catalyst three phase. Also provided is a device for treating a catalyst discharged from bubbling bed hydrogenation of residual oil.

Process and device for treating catalyst discharged from bubbling bed hydrogenation of residual oil

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Shanghai, China

Ling Shen