Chinese Academy of Sciences

Boe Technology Group Co., Ltd.

Tianjin Chase Sun Pharmaceutical Co., Ltd

Microsoft Technology Licensing, LLC

Beijing Boe Optoelectronics Technology Co., Ltd.

Other

Honor Device Co., Ltd.

Beijing Zitiao Network Technology Co., Ltd.

University of Science and Technology Beijing

National Institute of Metrology, China

Chinese Academy of Medical Sciences

Ling Li

Ming Liu

Qi Liu

Guozhong Xing

Huai Lin

Yang Yang

Yi Zheng

Hangbing Lv

Xiaoguang Chen

Ming Ji

Ke Fei Wang

Le Zhang

Changqing Xie

Yangheng Li

Weixiong Chen

Cheng Lu

Wei Wang

Xin Li

Hao Chen

Wei Chen

Bo Liu

Yu Liu

Chuanxiang Xu

Hua Yin Huang

Di Wang

Gang Yu

Ke Wang

Nianduan Lu

Zhiqiang Feng

Fangfang Lai

Nina Xue

Di Geng

Zuheng Wu

Chuan Zhou

Lijing Zhang

Congyan Lu

Yong Peng

Yong Song

Shibing Long

Li Song

Xiaoyan Zhu

Hanqing Liu

Zheng Tian

Yanfei Wang

Long Liu

Yumao Lu

Zicheng Huang

Jiebin Niu

Bin Guo

Kangwei Zhang

Yue Su

Kaiping Zhang

Linhong Han

Lingfei Wang

Jianshu Ji

Dashan Shang

Peiwen Zhang

Zhifeng Wu

Sijie He

Caihong Dai

Zhihong Yao

Che-Hsien Lee

Wanming Wu

Hao Peng

Xiaofeng Jin

Pengxiao Sun

De An Pan

Shen Gen Zhang

Guangwei Xu

Zhiheng Han

Xuewen Shi

Xinlv Duan

The present disclosure provides a memristor, including a transistor and a resistive random access memory, where a drain electrode of the transistor is connected to a bottom electrode of the resistive random access memory; and the resistive random access memory includes: the bottom electrode, a resistive random access material layer, a current compliance layer and a top electrode from bottom to top, where the current compliance layer is configured to stabilize a fluctuation of a low resistance by reducing a surge current and optimizing a heat distribution, so as to improve a calculation accuracy of a Hamming distance.

Memristor, method of calculating hamming distance, and in-memory computing integration application

A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.

Pressure sensor based on zinc oxide nanowires and method of manufacturing pressure sensor

A prop attachment method and apparatus, a device, and a storage medium are provided. The method comprises: obtaining mesh data of a target object mesh and mesh data of a basic object mesh; determining deformation of the target object mesh with respect to the basic object mesh on the basis of mesh data of the basic object mesh and mesh data of the target object mesh; on the basis of a triangle correspondence between a first prop mesh and the basic object mesh, the deformation information, and mesh data of the first prop mesh, controlling the first prop mesh to perform deformation transfer, to obtain mesh data of a second prop mesh; and on the basis of mesh data of the second prop mesh and mesh data of the target object mesh, displaying a target object attached with a second prop corresponding to the second prop mesh.

Prop attachment method and apparatus, device, and storage medium

A self-reference storage structure includes: three transistors, including a first transistor T, a second transistor T, and a third transistor T; and two magnetic tunnel junctions, including a first magnetic tunnel junction MTJand a second magnetic tunnel junction MTJ. The first magnetic tunnel junction MTJis connected in series between the first transistor Tand the second transistor T, and the second magnetic tunnel junction MTJis connected in series between the second transistor Tand the third transistor T. When the first transistor T, the second transistor Tand the third transistor Tare turned on, one-bit binary information is written; and when data is stored, one-bit binary write can be implemented only by applying an unidirectional current pulse.

Self-reference storage structure and in-memory computing circuit

The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

Three-state spintronic device, memory cell, memory array and read-write circuit

This application provides a shift register, a gate drive circuit, a display panel, and an electronic device. The shift register includes: a node control module, electrically connected to a first level signal receive end that receives a low level, a second level signal receive end that receives a high level, a first clock signal end, a second clock signal end, a first node, and a second node; an input module, electrically connected to the second clock signal end, a trigger signal input end, and the second node; a voltage regulator module, electrically connected to the second node, a third node, and the second clock signal end; and an output module, electrically connected to the first level signal receive end, the second level signal receive end, a drive signal output end, the first node, and the third node.

Shift register for display gate driver with silicon and oxide semiconductor transistors

A display substrate includes a first display region and a second display region. The display substrate may include: a first base substrate; a second base substrate; a first barrier layer and a light emitting unit. The first base substrate includes a first through region penetrating the first base substrate, and the first barrier layer includes a second through region penetrating the first barrier layer. The second base substrate includes a first substrate sub-portion located in the first display region, the first substrate sub-portion penetrates the second through region, and at least a portion of the first substrate sub-portion is located in the first through region. The display substrate includes a recessed portion. The second base substrate includes a first surface located in the first display region and a second surface located in the second display region, and the first surface and the second surface are formed as a flat surface.

Display substrate and method for manufacturing the same, and display device

A bidirectional reflectance distribution function (BRDF) measurement system and method, an electronic device, and a storage medium. The BRDF measurement system includes: a blackbody, a spectroradiometer and a controller; where in case that the blackbody is heated to a target temperature, it undergoes a solid-liquid phase change; the spectroradiometer is used to measure the blackbody and transmit a first measurement signal to the controller, and in case that the blackbody irradiates a to-be-measured point on a sample surface, the spectroradiometer is further used to measure radiation from the to-be-measured point, and transmit a second measurement signal to the controller; and the controller is used to obtain a BRDF of the to-be-measured point based on the first measurement signal, the second measurement signal, the target geometric relationship, a target mapping relationship and a dimension parameter of the blackbody.

BRDF measurement system and method, electronic device, and storage medium

The disclosure provides a spintronic device, a SOT-MRAM storage cell, a storage array and a in-memory computing circuit. The spintronic device includes a ferroelectric/ferromagnetic heterostructure, a magnetic tunnel junction, and a heavy metal layer between the ferroelectric/ferromagnetic heterostructure and the magnetic tunnel junction; the ferroelectric/ferromagnetic heterostructure includes a multiferroic material layer and a ferromagnetic layer arranged in a stacked manner, and the magnetic tunnel junction includes a free layer, an insulating layer and a reference layer arranged in a stacked manner, and the heavy metal layer is disposed between the ferromagnetic layer and the free layer. According to one or more embodiments of the disclosure, the spintronic device, the SOT-MRAM storage cell, the storage array and the in-memory computing circuit can realize deterministic magnetization inversion under the condition of no applied field assistance.

Spintronic device, SOT-MRAM storage cell, storage array and in-memory computing circuit

A pixel compensation circuit including a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first capacitor, a second capacitor, and an organic light-emitting diode, each of the first transistor to the sixth transistor including a drain, a source and a gate.

Pixel compensation circuit

The present disclosure provides a method and an apparatus for obtaining surface potential. The method comprises: obtaining parameter information of multiple target devices, wherein the parameter information includes: size, device structure, material parameter, and carrier mobility of each of the target devices at different temperatures, and the multiple target devices include: devices fabricated by using conventional materials and devices fabricated by using first new materials whose surface potentials have been determined, and the conventional materials include bulk materials and the first new materials include thin film materials; extracting surface potentials based on the size, the device structure, the material parameter and the mobility of each of the target devices under corresponding operating conditions; establishing a surface potential database based on the surface potentials and the parameter information; constructing a surface potential analytical model according to neural network based on the surface potential database; and determining the surface potential of a device fabricated by using a second new material by using the surface potential analytical model.

Method and apparatus for obtaining surface potential

A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes. The invention has the advantages of reasonable theory, accurate result, simple and easy operation, and is favorable for optimizing the device performance and establishing a complete electrical model of the device.

Method for obtaining a contact resistance of a planar device

A computer-implemented technique is described herein for facilitating discovery of information items. The technique involves providing at least one set of indicators to a user via a user interface presentation. The indicators represent respective topics. Each distance d between a pair of respective indicators, associated with respective topics (t, t'), is based on at least: a similarity between the topic t and the topic t&#x2032; as expressed by a knowledge graph; and a dynamic and personalized joint measure of the user's current interest in the topic t and the topic t&#x2032;. The technique further involves providing at least one information item to the user in response to the user's engagement with the user interface presentation.

Facilitating discovery of information items using dynamic knowledge graph

The disclosure provides a method and apparatus for designing a resistive random access memory, and the method comprise: receiving a preset first parameter standard of a resistive switching material, searching for and outputting a first resistive switching material based on the first parameter standard, first parameters including: band gap, charge transfer, vacancy, migration barrier, carrier activation energy. Schottky barrier and number of mesophase: establishing a resistive switching material database according to the first resistive switching materials; receiving a second parameter standard for a resistive random access memory device model, and selecting a second resistive switching material from the resistive switching material database according to the second parameter standard, second parameters including: Forming voltage, SET voltage, RESET voltage, erasing and writing speed, power consumption, storage window, stability, durability, on-off ratio, fluctuation of current parameter and storage density of the device model; and designing a resistive random access memory by using the second resistive switching material, corresponding electrode material, and a predetermined storage structure.

Method and apparatus for designing resistive random access memory

The present invention discloses a nicotinyl alcohol ether derivative, a preparation method therefor, and a pharmaceutical composition and uses thereof. Specifically, the invention relates to nicotinyl alcohol ether derivatives represented by formula (I), a pharmaceutically-acceptable salt thereof, a stereoisomer thereof, a preparation method therefor, a pharmaceutical composition containing the one or more compounds, and uses of the compounds in treating diseases related to PD-1/PD-L1 signal channels, such as cancers, infectious diseases and autoimmune diseases. 

Nicotinyl alcohol ether derivative, preparation method therefor, and pharmaceutical composition and uses thereof

Growing community of inventors

Beijing, China

Ling Li