Showa Denko K.k.

Resonac Corporation

Ling Guo

Koji Kamei

This method of evaluating a SiC substrate includes a preparation step of preparing two or more SiC substrates obtained from the same SiC ingot grown from the same seed crystal, a defect position specifying step of specifying positions of defects in the substrates by observing a main surface of each of the two or more SiC substrates, and a comparison step of comparing the positions of the defects of the two or more SiC substrates, in which, in the preparation step, a SiC substrate positioned closest to the seed crystal is used as a reference wafer among the two or more SiC substrates, and the comparison step comprises a sub-step wherein a first defect of the reference wafer is compared with a second defect of a SiC substrate other than the reference wafer, it is judged whether a defect distance of the two compared defects in a [11-20] direction is 0.6 mm or more or less than 0.2 mm, and the two compared defects are determined to be defects not associated with the same threading defect when the defect distance is 0.6 mm or more, and the two compared defects are determined to be defects associated with the same threading defect when the defect distance is less than 0.2 mm.

Method of evaluating SiC substrate, method of manufacturing SiC epitaxial wafer, and method of manufacturing SiC device

A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.01 defects/cmor more and 0.6 defects/cmor less. The large pit defect is a pit located on a surface at a position corresponding to a position of the carbon inclusion on the substrate surface, and a conversion rate from the substrate carbon inclusions to the large pit defects and the triangular defects caused by the substrate carbon inclusions is 20% or less. Also disclosed is a method for producing the SiC epitaxial wafer.

SiC epitaxial wafer, production method therefor, and defect identification method

A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H&#x2014;SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cmor less.

SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor

A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cmor less.

Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less

Provided is a manufacturing method for a SiC device including: performing an ion implantation process of implanting ions in an epitaxial layer of a SiC epitaxial wafer that has the epitaxial layer; and performing an evaluation process of evaluating a defect of the SiC epitaxial wafer after the ion implantation process, in which the evaluation process includes a surface inspection process of inspecting a surface of the SiC epitaxial wafer, a PL inspection process of irradiating a region that includes the defect detected in the surface inspection to perform photoluminescence measurement after the surface inspection process, and a determination process of determining a degree of the defect from a surface defect image detected in the surface inspection and a PL defect image detected in the PL inspection process.

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Chichibu, Japan

Ling Guo