Nlight Photonics Corporation

Ling Bao

Shiguo Zhang

Sandrio Elim

A metallization layer for a semiconductor device includes a first layer made of Pt and having a thickness greater than or equal to 15 &#x212b; and less than or equal to 50 &#x212b;, and a second layer formed on the first layer and made of a plurality of metallic sub-layers such as Ti/Pt/Au. A semiconductor device fabricated from the metallization layer includes a semiconductor substrate having a top layer and mesa structure and corresponding surface for securing an insulating layer and a corresponding exposed surface, and wherein the metallization layer is deposited over the insulating layer and exposed surface. Methods for forming the metallization layer are also disclosed.

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Vancouver, WA, United States of America

Ling Bao