Stmicroelectronics (research & Development) Limited

Ecole Polytechnique Federale De Lausanne

Stmicroelectronics (grenoble 2) Sas

The University of Edinburgh

Lindsay Grant

Pascal Mellot

Robert K Henderson

Stuart McLeod

Ewan Findlay

Edoardo Charbon

Justin Richardson

Cristiano Niclass

Adam Caley

Marek Gersbach

Andrew Murray

James Downing

A Single-Photon Avalanche Diode (SPAD) is disclosed. The SPAD may include an active region for detection of incident radiation, and a cover configured to shield part of the active region from the incident radiation. An array is also disclosed and includes SPADs arranged in rows and columns. A method for making the SPAD is also disclosed.

Single-photon avalanche diode and an array thereof

An image sensor includes a pixel array and an image sensor objective optical element. The element is formed by a lenslet array. Each lenslet in the array directs incoming radiation onto a different specific pixel or sub-array of pixels in the pixel array. The lenslets in the array are shaped such that fields of view of next-but-one neighboring ones of the lenslets (i.e., two lenslets spaced from each other by another lenslet) do not overlap until a certain object distance away from the lenslet array.

Multi-channel image sensors

A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.

Single photon detector and associated methods for making the same

Growing community of inventors

Edinburgh, United Kingdom

Lindsay Grant