Asm International N.v.

Asm IP Holding B.v.

Linda Lindroos

Tom E Blomberg

Jan Willem Maes

Dieter Pierreux

David Kurt De Roest

Raija H Matero

Hessel Sprey

Kees Van Der Jeugd

Lucia D'Urzo

Hannu Huotari

An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

Fluorine-containing conductive films

Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl, antimony alkylamines, and antimony alkoxides, such as Sb(OEt). The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

Atomic layer deposition of antimony oxide films

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Linda Lindroos