Applied Materials, Inc.

Oracle International Corporation

Sumitomo Electric Industries, Limited

Lin Zhang

Shuran Sheng

Joseph C Werner

Xuesong Lu

Andrew V Le

Jang Seok Oh

Padmanabhan Krishnaraj

Xiaolin C Chen

DongQing Li

Zhuang Li

Farhad K Moghadam

Thanh Ngoc Pham

Stanley Wu

Ralph Peter Antonio

Anchuan Wang

Zheng Yuan

Michael Santiago Cox

Xinhai Han

Hari K Ponnekanti

Sebastian Turullols

Govinda Raj

Michael P Stewart

Rongping Wang

Prabhat Kumar

Yifan YangGong

Shawyon Jafari

Patrick L Smith

Hanish Kumar

Jiyong Huang

Fa Ji

Jennifer Y Sun

Ellie Y Yieh

David P Thompson

Takashi Matsui

Robert Jan Visser

Ganesh Balasubramanian

Jeonghoon Oh

Hichem M'Saad

Hiromi Kurashima

Zhenjiang Cui

Kazushige Oki

Huixiong Dai

Kadthala Ramaya Narendrnath

Jian J Chen

Derek R Witty

Gopalakrishna B Prabhu

Umesh M Kelkar

Ala Moradian

Michael Johnson

Kapila P Wijekoon

Yaxin Wang

Zhijun Jiang

Karthik Ramanathan

Kuniyuki Ishii

Manoj Vellaikal

Patrick M Martin

Nitin Khurana

Yixing Lin

Wen Ma

Yikai Chen

Timothy B Michaelson

Bruno Geoffrion

James Omer L'Heureux

Alan Tso

Bikram Kapoor

Jingjing Xu

Jignesh M Shah

Ying Ma

Hideaki Kamisugi

Lung-Tien Han

Balaji Pasupathy

Rohit Mahakali

Mahesh Adinath Kanawade

Andy Le

Kalyan Rapolu

Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method of monitoring a processing system includes receiving, through a data acquisition device, temperature information from one or more temperature sensors and receiving context information from a system controller coupled to a processing system comprising the processing chamber. Here, the one or more temperature sensors are disposed in one or more locations external to a processing volume of a processing chamber. The context information relates to instructions executed by the system controller to control one or more operations of the processing system.

Advanced temperature monitoring system and methods for semiconductor manufacture productivity

Embodiments herein provide methods of monitoring temperatures of fluid delivery conduits for delivering fluids to, and other components external to, a processing volume of a processing chamber used in electronic device fabrication manufacturing, and monitoring systems related thereto. In one embodiment, a method includes receiving, at the temperature monitoring system (TMS) controller, information from a first plurality of temperature sensors and a second plurality of temperature sensors, comparing, using the TMS controller, the temperature information to one or more pre-determined control limits, and communicating, using the TMS controller, an out-of-control event to a user. Generally, the temperature monitoring system features the first and second pluralities of temperature sensors, the TMS controller, a first connection module, and a second connection module.

Advanced temperature monitoring system with expandable modular layout design

Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

Substrate support cover for high-temperature corrosive environment

Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

Lid stack for high frequency processing

Examples disclosed herein relate to a method and apparatus for cleaning and repairing a substrate support having a heater disposed therein. A method includes (a) cleaning a surface of a substrate support having a bulk layer, the substrate support is disposed in a processing environment configured to process substrates. The cleaning process includes forming a plasma at a high temperature from a cleaning gas mixture having a fluorine containing gas and oxygen. The method includes (b) removing oxygen radicals from the processing environment with a treatment plasma formed from a treatment gas mixture. The treatment gas mixture includes the fluorine containing gas. The method further includes (c) repairing an interface of the substrate support and the bulk layer with a post-treatment plasma. The post-treatment plasma is formed from a post-treatment gas mixture including a nitrogen containing gas. The high temperature is greater than or equal to about 500 degrees Celsius.

High-temperature chamber and chamber component cleaning and maintenance method and apparatus

A method includes receiving measurement data from multiple sensors positioned along a delivery line that delivers a liquid as a gas to one of a gas panel or a processing chamber; simulating, using a computer-generated model, one or more process parameters associated with the delivery line and a plurality of heater jackets positioned around the delivery line; comparing the measurement data with values of the one or more process parameters; and determining, based on at least a threshold deviation between the measurement data and the values of the one or more process parameters, that a fault exists that is associated with maintaining temperature within the delivery line consistent with a gaseous state of the liquid.

Parameter sensing and computer modeling for gas delivery health monitoring

A method for determining power dissipation within a computer system is disclosed. A circuit block may receive a regulated voltage level on a power supply signal generated by a voltage regulator circuit. A power control circuit may measure a current drawn by the circuit block, and determine a real-time voltage level for the power supply signal using the current and based on a slope value and a zero-load voltage level. Additionally, power control circuit may determine a power dissipation for the circuit block using the current and the real-time voltage level, and adjust an operation parameter of the circuit block based on the power dissipation.

Load line compensation in power monitoring

Methods and apparatus for detecting ultraviolet light are provided herein. For example, an ultraviolet (UV) process chamber includes a vacuum window or a transparent showerhead; a UV light source disposed above one of the vacuum window or the transparent showerhead and configured to generate and transmit UV light into a process volume of the UV process chamber; and a first UV sensor configured to measure at least one of emissivity from the UV light source or irradiance of the UV light transmitted into the process volume and to transmit a signal corresponding to a measured at least one of emissivity from the UV light source or irradiance of the UV light to a controller coupled to the UV process chamber during operation.

In-situ light detection methods and apparatus for ultraviolet semiconductor substrate processing

A method and apparatus for forming a backside coating on a substrate to counteract stresses from a previously deposited film is disclosed. In one embodiment, a method for flattening a bowed substrate includes providing a substrate having a film stack formed on a first major surface thereof, wherein the substrate comprises a bowed orientation, and forming a coating a second major surface of the substrate, wherein the coating is configured to counter stresses produced by the film stack and flattens the substrate from the bowed orientation.

Methods and apparatus to eliminate wafer bow for CVD and patterning HVM systems

An FI having an in-situ particle detector and a method for particle detection therein are provided. In one aspect, the FI includes a fan, a substrate support, a particle detector, and an exhaust outlet. The fan, substrate support, and particle detector are arranged such that, in operation, the fan directs air towards the exhaust outlet and over a substrate on the substrate support to create laminar flow. The particle detector, positioned downstream from the substrate support and upstream from the exhaust outlet, analyzes the air and detects particle concentration before the particles are exhausted. The collected particle detection data may be combined with data from other sensors in the FI and used to identify the source of particle contamination. The particle detector may also be incorporated into other system components, including but not limited to, a load-lock or buffer chamber to detect particle concentration therein.

Advanced in-situ particle detection system for semiconductor substrate processing systems

Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.

Cooled gas feed block with baffle and nozzle for HDP-CVD

Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

Advanced coating method and materials to prevent HDP-CVD chamber arcing

Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

Arcing detection apparatus for plasma processing

Growing community of inventors

San Jose, CA, United States of America

Lin Zhang