Applied Materials, Inc.

Lam Research Corporation

Microsoft Technology Licensing, LLC

Lin Xu

Anchuan Wang

John Edward Daugherty

Zhijun Chen

Hong Shih

Nitin K Ingle

Satish Srinivasan

John Michael Kerns

Xikun Wang

Robert G O'Neill

David Joseph Wetzel

Soonam Park

Jeffrey W Anthis

Son Truong Nguyen

Duane Outka

Jiayin Huang

Jessica Sevanne Kachian

Tom Stevenson

Sivakami Ramanathan

Robin Koshy

Armen Avoyan

Cliff La Croix

Amir A Yasseri

Girish M Hundi

Russell Ormond

Nash W Anderson

William Charles

Eric A Pape

Christopher Kimball

Parvez Ahammad

Lei Liu

Ryan M Rogers

Subbu Subramaniam

Tae Won Kim

Jefferson Lai

Adrian Rivera Cardoso

Rahul Tandra

Peter Holland

Mark B Cesar

Yu Chen

Vinyas Maddi

Shraddha Sahay

Gavin Castro Uathavikul

Neha Jain

Yuanping Song

Yiwei Song

Johnny Pham

Douglas Detert

Pankaj Hazarika

Anthony Amadio

Sonia Castillo

A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

Single crystal metal oxide plasma chamber component

An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

Laminated aerosol deposition coating for aluminum components for plasma processing chambers

A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10/K. A metal oxide layer is then disposed over a surface of the component body.

Method for conditioning semiconductor processing chamber components

A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

Conditioning chamber component

Technologies for providing event-level data privacy for streaming post analytics data include, in some embodiments, receiving a data stream that includes instances of count data collected over a time interval, computing a true count breakdown that includes a set of sub-counts of non-public user interface interactions on the post, creating a noisy count breakdown by applying at least one differential privacy mechanism to the set of sub-counts, and streaming the noisy count breakdown instead of the true count breakdown to a computing device. At least one of the sub-counts is a count that is associated with a particular value of an attribute that has different possible values. The attribute is associated with the non-public user interface interactions on the post.

Event-level data privacy for streaming post analytics data

Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material and a second layer of an oxygen-containing material. The methods may also include removing the oxygen-containing material.

Systems and methods to form airgaps

A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

Quartz component with protective coating

An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

Exemplary etching methods may include flowing a fluorine-containing precursor into a substrate processing region of a semiconductor processing chamber. The methods may include flowing a hydrogen-containing precursor into the substrate processing region. The methods may include contacting a substrate housed in the substrate processing region with the fluorine-containing precursor and the hydrogen-containing precursor. The substrate may include a trench or recessed feature, and a spacer may be formed along a sidewall of the trench or feature. The spacer may include a plurality of layers including a first layer of a carbon-containing or nitrogen-containing material, a second layer of an oxygen-containing material, and a third layer of a carbon-containing or nitrogen-containing material. The second layer of the spacer may be disposed between the first layer and third layer of the spacer. The methods may also include removing the oxygen-containing material.

Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide and a region of exposed metal. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide.

Water-free etching methods

Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Oxide etch selectivity systems and methods

A method and apparatus for processing a semiconductor substrate are described herein. A process system described herein includes a plasma source and a flow distribution plate. A method described herein includes generating fluorine radicals or ions, delivering the fluorine radicals or ions through one or more plasma blocking screens to a volume defined by the flow distribution plate and one of one or more plasma blocking screens, delivering oxygen and hydrogen to the volume, mixing the oxygen and hydrogen with fluorine radicals or ions to form hydrogen fluoride, flowing hydrogen fluoride through the flow distribution plate, and etching a substrate using bifluoride. The concentration of fluorine radicals or ions on the surface of the substrate is reduced to less than about two percent.

Flow distribution plate for surface fluorine reduction

Exemplary cleaning or etching methods may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. Methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a region of exposed oxide. Methods may also include providing a hydrogen-containing precursor to the processing region. The methods may further include removing at least a portion of the exposed oxide while maintaining a relative humidity within the processing region below about 50%. Subsequent to the removal, the methods may include increasing the relative humidity within the processing region to greater than or about 50%. The methods may further include removing an additional amount of the exposed oxide.

Removal methods for high aspect ratio structures

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Fremont, CA, United States of America

Lin Xu