Globalfoundries Singapore Pte. Ltd.

Lin Wei

Raj Verma Purakh

Upinder Singh

Methods of forming an EDNMOS with polysilicon fingers between a gate and a nitride spacer and the resulting devices are provided. Embodiments include forming a polysilicon layer upon a GOX layer over a substrate; forming a gate and plurality of fingers and a gate and plurality of fingers through the polysilicon layer down the GOX layer; forming an oxide layer over the GOX layer and sidewalls of the gates and fingers; forming a nitride layer over the oxide layer; removing portions of the nitride and oxide layers down to the polysilicon and GOX layers to form nitride spacers; and forming S/D regions laterally separated in the substrate, each S/D region adjacent to a nitride spacer.

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Singapore, Singapore

Lin Wei