Taiwan Semiconductor Manufacturing Comp. Ltd.

Lin-Ting Lin

Jiann-Horng Lin

Huan-Just Lin

Chih-Teng Liao

Han-Ting Lin

Sin-Yi Yang

An-Shen Chang

Yu-Feng Yin

Chen-Jung Wang

Po-Ju Chen

Yin-Hao Wu

Hsing-Hsiang Wang

Kun-Yi Li

Meng-Chieh Wen

Zheng-En Bao

A recovery layer (e.g., a layer of organic and/or tin-based material) is formed within recesses, in which adjacent MEOL or BEOL structures are formed, after plasma ashing and before a trimming process. The recovery layer preserves hardmask material and dielectric material such that upper surfaces of the adjacent MEOL or BEOL structures remain physically separated. As a result, the adjacent MEOL or BEOL remain electrically isolated and functional.

Semiconductor structure formation

A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.

Memory device structure and method for forming the same

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Taichung, Taiwan

Lin-Ting Lin