Taiwan Semiconductor Manufacturing Comp. Ltd.

Lin-Ting Lin

Jiann-Horng Lin

Huan-Just Lin

Sin-Yi Yang

Han-Ting Lin

Chen-Jung Wang

Hsing-Hsiang Wang

Kun-Yi Li

Meng-Chieh Wen

Chih-Teng Liao

An-Shen Chang

Yu-Feng Yin

Po-Ju Chen

Lan-Hsin Chiang

Yin-Hao Wu

Zheng-En Bao

A semiconductor structure and a method for forming a semiconductor structure are provided. A substrate having a cell region and a mark region is received. A dielectric layer is etched to expose a conductive line in the cell region and form a trench in the mark region. A conductive layer is formed over the cell region and in the trench. The conductive layer is etched to form a bottom electrode via in the cell region and a first mark layer in the trench.

Memory device and method for forming thereof

A recovery layer (e.g., a layer of organic and/or tin-based material) is formed within recesses, in which adjacent MEOL or BEOL structures are formed, after plasma ashing and before a trimming process. The recovery layer preserves hardmask material and dielectric material such that upper surfaces of the adjacent MEOL or BEOL structures remain physically separated. As a result, the adjacent MEOL or BEOL remain electrically isolated and functional.

Semiconductor structure formation

A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.

Memory device structure and method for forming the same

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Taichung, Taiwan

Lin-Ting Lin