Ap Memory Technology Corporation

Lin Ma

Wenliang Chen

Chun Yi Lin

Keng Lone Wong

Alessandro Minzoni

Hung-Piao Ma

Girish Nanjappa

Chien-An Yu

Wen Liang Chen

An interface of a memory circuit includes a chip enable terminal, at least one data terminal, and a data strobe terminal. The chip enable terminal receives a chip enable signal that varies between a first high voltage and a low voltage. The at least one data terminal receives a first data signal that varies between a second high voltage and the low voltage during a command phase, and transmits or receives a second data signal during a data phase. The data strobe terminal receives a first data strobe signal that periodically varies between the second high voltage and the low voltage during the command phase, and transmits or receives a second data strobe signal that swings periodically during the data phase. During a transition interval between the command phase and the data phase, the data strobe terminal stops receiving or transmitting data strobe signals that swing periodically.

Interface of a memory circuit

A method for manufacturing a plurality of semiconductor structures is provided. The method includes the operations as follows. A first hybrid bonding layer is formed over a first wafer including a plurality of first memory structures. A second hybrid bonding layer is formed over a second wafer including a plurality of control circuit structures. The memory structures and the control circuit structures are in contact with the first and the second hybrid bonding layers, respectively. The first wafer and the second wafer are bonded through a first hybrid bonding operation to connect the first and the second hybrid bonding layers, thereby obtaining a first bonded wafer. At least the first wafer, the second wafer, the first hybrid bonding structure, and the second hybrid bonding structure are singulated to obtain the plurality of semiconductor structures. A method for manufacturing a system in package (SiP) is also provided.

Methods for manufacturing a plurality of semiconductor structures and system in package

A display controller includes a first chip and a second chip. The first chip is configured to control a display device. The second chip is externally coupled to the first chip, and configured to be a random access memory and. The first chip is further configured to provide a first supply power to the second chip and to access the second chip during the controlling of the display device.

Display controller having a surge protection unit and display system thereof

A method of operating a microelectronic package includes a processing device stacking vertically with at least one memory device. The method includes a step of: reading data stored in a plurality of memory cells of a plurality of memory units of the memory device, with the processing device, with a plurality of signal channels each of which is dedicated to transmit signals from the processing device to one of the memory units and vice versa.

Method of operating microelectronic package

An interface of a memory circuit includes a chip enable terminal, at least one data terminal, and a data strobe terminal. The chip enable terminal receives a chip enable signal that varies between a first high voltage and a low voltage for enabling the memory circuit. The at least one data terminal receives at least one first data signal that varies between a second high voltage and the low voltage. The data strobe terminal receives a first data strobe signal that periodically varies between the second high voltage and the low voltage. The first data strobe signal is synchronized with the at least one first data signal, and is arranged to latch and sample the at least one first data signal. The first high voltage is higher than the second high voltage, and the second high voltage is higher than the low voltage.

Interface of a memory circuit and memory system thereof

A semiconductor structure is provided. The semiconductor structure includes a first hybrid bonding structure, a memory structure, and a control circuit structure. The first hybrid bonding layer includes a first surface and a second surface. The memory structure is in contact with the first surface. The control circuit structure is configured to control the memory structure. The control circuit structure is in contact with the second surface. A system in package (SiP) structure and a method for manufacturing a plurality of semiconductor structures are also provided.

Semiconductor structure and method for manufacturing a plurality thereof

A method to manufacture a semiconductor device includes: bonding a first wafer and a second wafer to be stacked vertically with one another, in which the first wafer provides a plurality of memory components and the second wafer provides a control circuit; forming a plurality of input/output channels on a surface of one of the first and second wafers; and cutting the bonded first and second wafers into a plurality of dices; wherein a plurality of first conductive contacts in the first wafer are electrically connected to the control circuit and the first conductive contacts in combinations with a plurality of first conductive vias in the first wafer form a plurality of transmission channels through which the control circuit is capable to access the memory components.

Method to manufacture semiconductor device

A method of assembling a microelectronic package includes the step of: stacking a processing device vertically with at least one memory device and electrically connecting the processing device to a plurality of conductive interconnects of one of the at least one memory device, wherein each of the at least one memory device includes: a substrate, presenting a front surface and a back surface; and a plurality of memory units formed on the front surface, each of which comprises a plurality of memory cells and the conductive interconnects electrically connected to the memory cells; and arranging the conductive interconnects to contribute to a plurality of signal channels each of which dedicated to transmit signals from the processing device to one of the memory units and vice versa.

Method of assembling microelectronic package and method of operating the same

A semiconductor device includes a first semiconductor portion and a second semiconductor portion. The first semiconductor portion provides a plurality of memory components, including a first substrate layer, a plurality of first interconnect conductive layers, a plurality of first conductive vias, and a plurality of first conductive contacts. The first conductive contacts electrically connect to the first conductive vias, and the first conductive contacts in combination with the first conductive vias are formed on a top first interconnect conductive layer of the first interconnect conductive layers. The second semiconductor portion provides a control circuit, including a second substrate layer and a plurality of second interconnect conductive layers. The first and second semiconductor portions are stacked vertically with one another, so that the first conductive contacts are electrically connected to the control circuit, and the first conductive contacts in combinations with the first conductive vias form a plurality of transmission channels.

Semiconductor device and method to manufacture the same

The invention provides a memory device and microelectronic package having the same. The microelectronic package comprises at least one memory device which is adapted to be stacked vertically with one another, and a processing device stacked vertically and adjacently with the at least one memory device and electrically connected to the conductive interconnects. Each of the memory devices comprises a substrate and a plurality of memory units. The substrate presents a front surface and a back surface. The memory units are formed on the front surface, each of which comprises a plurality of memory cells and a plurality of conductive interconnects electrically connected to the memory cells. In each of the memory units, the conductive interconnects contribute to a plurality of signal channels each of which is dedicated to transmit signals from the processing device to one of the memory units and vice versa.

Growing community of inventors

Hsinchu County, Taiwan

Lin Ma