Novartis Ag

Alpha and Omega Semiconductor International LP

Lin Lv

Jun Lu

Pascal Furet

Ian Bruce

Stephen Paul Collingwood

Vince S Yeh

Long-Ching Wang

Jon Christopher Loren

Sylvie Chamoin

Duncan Shaw

Vikki Furminger

Shuhua Zhou

Sarah Lewis

Alex Michael Saunders

Valentina Molten

Roy Maxwell Turner

A semiconductor device comprises a semiconductor substrate, a plurality of metal layers, an adhesive layer, a compound layer, and a plurality of contact pads. A thickness of the semiconductor substrate is in a range from 15 μm to 35 μm. A thickness of the compound layer is larger than the thickness of the semiconductor substrate. A coefficient of thermal expansion of the compound layer is less than or equal to 9 ppm/° C. A glass transition temperature of the compound layer is larger than 150° C. The plurality of metal layers comprises a first titanium layer, a first nickel layer, a silver layer, a second nickel layer, and a metallic layer. In a first example, the metallic layer is a second titanium layer. In a second example, the metallic layer is a Titanium Nitride (TiN) layer.

Chip scale package (CSP) semiconductor device having thin substrate

The present invention provides novel solid forms of pharmaceutically active agents and therapeutic uses thereof. The present invention further provides a combination of pharmacologically active agents and a pharmaceutical composition.

Salt forms of bicyclic heterocyclic derivatives

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Shanghai, China

Lin Lv