Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Hannstar Display Corporation

Chi Mei Optoelectronics Corporation

Toppoly Optoelectronics Corporation

Taiwan Tft Lcd Association

Lin-En Chou

Cheng-Chung Lee

Wei-Yi Lin

Wen-Tung Wang

Ying-Hsien Chen

Chia-Hao Tsai

Hung-Che Ting

A method for producing a thin film transistor includes providing a glass substrate; disposing a positive photosensitive coating on the glass substrate; providing a transparent molding plate having a plurality of ladder opaque protrusions that are arranged in accordance with a predetermined pattern and that have at least two different depths; pressing the transparent molding plate into the positive photosensitive coating without contacting the glass substrate; exposing a part of the positive photosensitive coating which is unshielded under the ladder opaque protrusions, with a UV light; separating the transparent molding plate from the glass substrate after the step of exposing; and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, using a chemical solvent, whereby the thin film transistor is formed in a pattern having more than two different depths.

Method for producing a thin film transistor

A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.

Method for improving vacuum

A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge system to transform the silicon nitride/silicon oxide layer into a silicon oxynitride layer. The semiconductor device may be completely manufactured in simplex equipment. Therefore, the production time and production cost are favorably reduced.

Method for forming a silicon oxynitride layer

Growing community of inventors

Hsinchu, Taiwan

Lin-En Chou