Lucent Technologies Inc.

Alcatel Lucent

Alcatel-lucent USA Inc.

Triquint Technology Holding Co.

Liming Zhang

David Alan Ackerman

Xing Wei

Nils Guenter Weimann

Juerg Leuthold

Weiguo Yang

Nick Sauer

Christopher Richard Doerr

Long L Chen

Young-Kai Chen

Thomas Andrew Strasser

Po Dong

Andrew John Stentz

Barry Irwin Miller

Dries Van Thourhout

Lawrence Warren Stulz

Pietro Arturo Bernasconi

Sung-Nee George Chu

John Evan Johnson

Karsten Rottwitt

Leonard Jan-Peter Ketelsen

Jeffrey H Sinsky

William Crossley Dautremont-Smith

Kenneth L Bacher

Mei Du

Eric J Dean

Pietro Arturo Giovanni Bernasconi

Nicholas J Sauer

Pietro Bernasconi

Nils Weimann

A device includes a passive photonic layer located over a substrate and including at least one passive photonic element configured to propagate an optical signal therein. An electronic layer located between said substrate and said passive photonic layer includes at least one electronic device configured to propagate an electrical signal therein. An active photonic layer located over said passive photonic layer includes an active photonic device optically coupled to said passive photonic element and configured to convert between said electrical signal and said optical signal.

Electronic/photonic integrated circuit architecture and method of manufacture thereof

A method for manufacturing an electronic-photonic device. Epitaxially depositing an n-doped III-V composite semiconductor alloy buffer layer on a crystalline surface of a substrate at a first temperature. Forming an active layer on the n-doped III-V epitaxial composite semiconductor alloy buffer layer at a second temperature, the active layer including a plurality of spheroid-shaped quantum dots. Depositing a p-doped III-V composite semiconductor alloy capping layer on the active layer at a third temperature. The second temperature is less than the first temperature and the third temperature. The active layer has a photoluminescence intensity emission peak in the telecommunication C-band.

Fabricating electronic-photonic devices having an active layer with spherical quantum dots

Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer.

Photonic integration scheme

An interband self-mode-locked (SML) semiconductor laser utilizes an active waveguide structure that includes an active waveguide section and one or more passive waveguide sections that together enhances self-mode-locking. The SML laser operation is based on enhanced Kerr lens mode-locking by vertically optically combining the active section with one or more passive waveguide sections.

Self-mode-locked semiconductor laser

An optoelectronic integrated circuit (OEIC) having an optical core coupled to first and second interface circuits. The first interface circuit is adapted to convert an electrical input signal into an optical signal; the optical core is adapted to process the optical signal in the optical domain; and the second interface circuit is adapted to convert the processed optical signal into an electrical output signal. In one embodiment, an OEIC of the invention is fabricated using a single wafer, has only electrical inputs/outputs, does not have any external optical interfaces, and is not adapted to receive any external optical signals. Advantageously, due to the signal processing being in the optical domain, a circuit of the invention carries out its functionality, with little or no performance degradation, over a relatively wide frequency range. In addition, this circuit has a relatively small size and can be relatively inexpensive.

Integrated circuit having an optical core

The specification describes an optical pulse generator in a return-to-zero format in which a phase-modulated (PM) optical signal is converted to intensity-modulated (IM) optical pulses using chromatic dispersion. Compared with Mach-Zehnder-modulator-based pulse generators, this scheme is potentially more efficient (lower insertion loss). The pulse generator of the invention is suitable for very high data rates, e.g. 40 Gb/s. The structure of the pulse generator is a phase-modulated pulse source combined with a dispersive element having the required dispersion.

Optical pulse generator for return-to-zero signaling

A high power multi-frequency laser includes a laser cavity defined by reflective elements, a frequency routing device in the cavity comprising a plurality of frequency selective pathways, a first set of optical amplifiers optically coupled to a first end of the frequency routing device, and a second set of optical amplifiers optically coupling a second end of the frequency routing device and a first one of the reflective elements. The high power multi-frequency laser further includes a power combiner. The power combiner is optically coupled to the first set of optical amplifiers and a second one of the reflective elements and combines the outputs of the first set of optical amplifiers such that a common output for the multi-frequency laser is provided. The common output of the present invention provides a single output from the multi-frequency laser having a high output coupling efficiency.

High power multi-frequency laser

A process evaluates an aging property of a distributed Bragg reflector (DBR) laser. The process includes illuminating a Bragg grating of the distributed Bragg reflector (DBR) laser with light while the DBR laser is both supplied a tuning current and not lasing. The process also includes performing an action to the DBR laser responsive to a wavelength of a Bragg peak in a portion of the light reflected by the Bragg grating and a value of the tuning current supplied during the illuminating.

Aging in tunable semiconductor lasers

In accordance with the invention, a train of RZ or CSRZ pulses is produced by passing phase modulated laser light through a delay interferometer. The parameters of the phase modulation and the delay interferometer are calculated from the desired pulse train characteristics (e.g. repetition rate, RZ or CSRZ, duty cycle). A directly modulated CW laser, or a CW laser followed by a phase modulator, produces the constant amplitude, phase modulated light. The phase modulated signal is split into two paths. One signal path is delayed with respect to the other by the calculated delay. The signals are recombined in an optical coupler to produce an RZ pulse train and/or a CSRZ pulse train.

Delay interferometer optical pulse generator

A fiber Raman amplifier is configured to use a co-propagating Raman pump source, which may be beneficial in a variety of system configurations (for example, in bidirectional communication systems). By carefully configuring the pump source characteristics, sufficient optical gain can be achieved in the co-propagating arrangement, the characteristics including: (1) using an optical pump power of at least 50 mW, (2) having a relatively large spectral bandwidth within the pump (to suppress SBS); and (3) a frequency difference between all longitudinal pump modes of each pump laser being separated by at least the walk-off frequency between the pump laser frequency and the signal frequency, and all intense longitudinal modes between different pump lasers being separated by at least the electrical bandwidth of the communication system.

Optical communication system with co-propagating pump radiation for raman amplification

Growing community of inventors

Marlboro, NJ, United States of America

Liming Zhang