Yangtze Memory Technologies Co., Ltd.

Liming Cheng

Zhu Yang

Jingjing Geng

Xiangning Wang

Bin Yuan

Chen Zuo

Zhen Guo

Qiangwei Zhang

Aspects of the disclosure provide semiconductor devices. For example, a semiconductor device includes a substrate having a first region and a second region along a first direction that is parallel to a main surface of the substrate. Then, the semiconductor device includes a memory stack that includes a first stack of alternating gate layers and insulating layers and a second stack of alternating gate layers and insulating layers along a second direction that is perpendicular to the main surface of the substrate. Further, the semiconductor device includes a joint insulating layer in the second region and a third stack of alternating gate layers and insulating layers in the first region between the first stack of alternating gate layers and insulating layers and the second stack of alternating gate layers and insulating layers.

Vertical memory devices

Growing community of inventors

Wuhan, China

Liming Cheng