Other

Motorola Corporation

Lillian Charell Thompson

Changming Li

Theodore Gerard Tessier

Guy F Burgess

Anthony Paul Curtis

Ke Keryn Lian

Richard H Jung

Grace M O'Malley

George Amos Carson

Iwona Turlik

Eugene A Stout

Keryn K Lian

The subject matter contained herein discloses methods for forming a vertical metallic pillar overlying an under bump metal pad further overlying a semiconductor substrate, and applying a discrete solder cap on a top surface of the pillar, wherein the metallic pillar is defined by at least one photoresist layer. The method includes heating a multi-element metallic paste containing a variable amount of metallic powder, a melting point depressant and a flux such that the metal powder sinters to form the metallic pillar and simultaneously adheres the metallic pillar to the underbump metal pad.

Methods for forming pillar bumps on semiconductor wafers

An exemplary method includes forming a vertical pillar overlying or laterally displaced from a bond pad overlying a semiconductor substrate, and applying a discrete solder sphere in combination with one of a solder paste or flux on a top surface of the pillar, wherein the one of the solder paste or flux is defined by at least one photoresist layer. The method may include applying a solder sphere and/or solder flux in different combinations on top surfaces of different first and second pillars.

Method for building vertical pillar interconnect

A microelectronic assembly (10) includes a polymeric card (12) that includes a substantially planar major surface (18). An integrated circuit component (14) is embedded in the polymeric card (12) and has a first contact (20) and a second contact (22). An antenna element (16) is formed of a singular metallic strip and includes a first terminal (26) electrically connected to the first contact (20), a second terminal (28) electrically connected to the second contact (22), and a loop (30) intermediate the first terminal (26) and the second terminal (28). The first terminal (26) includes a first outer surface (32) and the second terminal (28) includes a second outer surface (34). The first outer surface (32) and the second outer surface (34) are exposed at the major surface (18) and are coextensive therewith. The loop (30) is embedded within the polymeric card (12) and spaced apart from the major surface (18).

Microelectronic assembly including an antenna element embedded within a

Method for making high power electrochemical capacitors (28) provides for depositing an electrically polymer (18) and (20) onto a substrate (12) which has been treated so as to form nitride layers (14) and (16) on exposed surfaces thereof. Such electrochemical capacitors provide for high power high energy devices without the short comings of excessive equivalent series resistance nor the expense of noble metal substrates as have been typically been used.

Modified polymer electrodes for energy storage devices and method of

An alkaline gel electrolyte for an electrochemical cell is based on a polymeric binder of polyvinyl alcohol or polyvinyl acetate. Potassium hydroxide and/or sodium hydroxide is blended into the polymeric binder or matrix, and the resulting solution is used to cast a film that is useful as a gel electrolyte. The hydroxide in the solution is between about 1% to 25% by weight, and the polymer concentration is between about 0.5% to 10% by weight. The resulting gel electrolyte film contains between 10 to 90% water by weight. A nickel or iron porphine modifier may be added in an amount between about 1 to 1000 parts per million. The alkaline gel electrolyte is useful in combination with asymmetric inorganic electrodes to make electrochemical cells, and can also function as a separator. Improved power density and higher cycle life is achieved with the gel electrolyte.

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Phoenix, AZ, United States of America

Lillian Charell Thompson