Contemporary Amperex Technology Co., Ltd.

Hunan Sanan Semiconductor Co., Ltd.

Contemporary Amperex Technology Limited

Lijun Li

Peng Jin

Wenbi Cai

Zhiyang Wu

Chao Guo

Nengwu Liao

Yonghong Tao

Yinxiang Lin

Zhigao Peng

Xuefeng Kang

Chaonan Liu

Yuanxu Guo

The present application provides an oven drying apparatus and a coating device. The oven drying apparatus comprises an oven drying chamber and a heating assembly. The oven drying chamber is equipped with a first oven drying side having a plurality of first air inlet portions for fluid medium to enter the oven drying chamber. The heating assembly is disposed on the first oven drying side. The first oven drying side is further provided with at least one air return portion provided between two adjacent first air inlet portions, and the air return portion being configured for fluid medium in the oven drying chamber to be discharged from the oven drying chamber. The arrangement of an air return portion between two first air inlet portions can discharge fluid medium between the two first air inlet portions and take away the heat, thus avoiding accumulation of heat between the two first air inlet portions.

Oven drying apparatus and coating device

This application relates to a conveyor and a baking device. A traction rope may bring an electrode plate to move in a transport space. The traction rope may be of high flexibility and can more smoothly bring the electrode plate to move in various complex environments such as an arcuate oven, thereby effectively avoiding derailment or jamming of the conveyor in the oven and conveying the electrode plate more smoothly in the oven.

Conveyor and baking device

A semiconductor device includes a semiconductor substrate, an epitaxial layer disposed on the semiconductor substrate, a cell zone including multiple unit cells disposed in the epitaxial layer opposite to the semiconductor substrate, a transition zone having a doped region and surrounding the cell zone, a source electrode unit disposed on the epitaxial layer opposite to the semiconductor substrate, and multiple gate electrode units. Each unit cell includes a well region, a source region disposed in the well region, and a well contact region extending through the source region to contact the well region. A method for manufacturing the semiconductor device is also disclosed.

Semiconductor device and method for manufacturing the same

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Fujian, China

Lijun Li