Csmc Technologies Fab2 Co., Ltd.

Lihui Gu

Sen Zhang

Nailong He

Congming Qi

Wentong Zhang

Teng Liu

The semiconductor device comprises a high-voltage device region, a low-voltage device region, and an isolation region. It further comprises a drift region, a second conductivity type well region, an isolation well region, an isolation structure, a power device source region, and a power device drain region. The drift region is disposed in the high-voltage device region. The second conductivity type well region is disposed in the isolation region and extends to the low-voltage device region. The isolation well region is disposed in the drift region and separates the drift region into a high-voltage drift region and a power device drift region. The isolation structure is disposed in the isolation well region. The power device source region is disposed in the isolation region and located in the second conductivity type well region, and the power device drain region is disposed in the power device drift region.

Semiconductor device and manufacturing method thereof

An integrated circuit chip and a manufacturing method therefor, and a gate drive circuit, the integrated circuit chip comprising: a semiconductor substrate (), a high voltage island () being formed in the semiconductor substrate (); a high voltage junction terminal (), the high voltage junction terminal () surrounding the high voltage island (), a depletion type MOS device (N) being formed on the high voltage junction terminal (), a gate electrode and a drain electrode of the depletion type MOS device (N) being short connected, and a source electrode of the depletion type MOS device (N) being connected to a high side power supply end (VB) of the integrated circuit chip; and a bipolar transistor (Q), a collector electrode of the bipolar transistor (Q) being short connected to the substrate and being connected to a low side power supply end (VCC) of the integrated circuit chip, an emitter of the bipolar transistor (Q) being connected to a gate electrode of the depletion type MOS device (N).

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Wuxi New District, China

Lihui Gu