Zhuzhou Crrc Times Electric Co., Ltd

Liheng Zhu

Guoyou Liu

Chunlin Zhu

An IGBT chip having a Γ-shape mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a gate region and two active regions located at two sides of the gate region. The gate region includes a trench gate and a planar gate that is located on a surface of the gate region, and the planar gate is connected with the trench gate and formed a Γ-shape mixed structure. In this way, the IGBT chip can have a significantly improved chip density, while retaining features of low power consumption and high current density of the trench gate and a feature of a wide safe operating area of the planar gate.

IGBT chip having folded composite gate structure

An IGBT chip having a mixed gate structure includes a plurality of mixed gate units. Each of the mixed gate units includes a source region () and a gate region. The gate region includes a planar gate region () and a trench gate region (), which are respectively disposed at both sides of the source region (). A planar gate and a trench gate are compositely disposed on the same cell (), thereby greatly improving chip density while retaining both trench gate's features of low on-state energy loss and high current density and planar gate's feature of wide safe operating area.

Growing community of inventors

Hunan, China

Liheng Zhu