Yangtze Memory Technologies Co., Ltd.

Liheng Liu

Chuan Yang

Shuangshuang Peng

A method for forming a semiconductor device includes forming a metal layer and a spacer adjacent to the metal layer. The spacer includes a composite-dielectric layer including a composite-dielectric material. A composition of the composite-dielectric material is a mixture of a composition of a first dielectric material and a composition of a second dielectric material different from the first dielectric material.

Memory device and hybrid spacer thereof

A semiconductor device includes a metal layer and a spacer arranged adjacent to the metal layer. The spacer includes a composite-dielectric layer including a composite-dielectric material. A composition of the composite-dielectric material is a mixture of a composition of a first dielectric material and a composition of a second dielectric material different from the first dielectric material.

Growing community of inventors

Wuhan, China

Liheng Liu