Phison Electronics Corporation

Lih Yuarn Ou

Wei Hung Lin

Szu-Wei Chen

Hsiao-Yi Lin

Yu-Cheng Hsu

Shih-Jia Zeng

Yu-Siang Yang

An-Cheng Liu

Tsai-Hao Kuo

A memory control method, a memory storage device, and a memory control circuit unit are provided. The memory control method includes: reading multiple first memory cells using multiple read voltage levels to obtain a first threshold voltage distribution of the first memory cells; obtaining shift information of the first threshold voltage distribution with respect to an original threshold voltage distribution of the first memory cells; obtaining first reliability information corresponding to the first threshold voltage distribution; recovering original reliability information corresponding to the original threshold voltage distribution according to a statistical characteristic of the first reliability information; adjusting the original reliability information according to the shift information to obtain second reliability information corresponding to the first threshold voltage distribution; and updating reliability information related to the first memory cells according to the second reliability information.

Memory control method, memory storage device, and memory control circuit unit

A decoding method, a memory controlling circuit unit, and a memory storage device are provided. The method includes: receiving a read command for reading first data; obtaining a current first temperature of a rewritable non-volatile memory module according to the read command; obtaining a second temperature of the rewritable non-volatile memory module of writing the first data to a first physical programming unit according to the read command; and selecting a first decoding operation according to the first temperature and the second temperature and executing the first decoding operation.

Decoding method, memory controlling circuit unit and memory storage device

A voltage adjusting method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit in a first physical programming unit group to obtain first data; correcting the first data according to a first error check and correction code corresponding to the first data to obtain first corrected data; reading a second physical programming unit in the first physical programming unit group to obtain second data; and adjusting a first read voltage for reading a first memory cell to a second read voltage according to the first data, the first corrected data, and the second data.

Voltage adjusting method, memory controlling circuit unit and memory storage device

A data accessing method, a memory controlling circuit unit and a memory storage device are provided. The method includes: reading a first physical programming unit by using a first read voltage to obtain first data; reading the first physical programming unit by using a second read voltage to obtain second data; inputting a first state parameter corresponding to the first data and a second state parameter corresponding to the second data into a numerical calculation engine, and determining a third reading voltage for reading the first physical programming unit by the numerical calculation engine.

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Taoyuan, Taiwan

Lih Yuarn Ou