National Cheng-kung University

Industrial Technology Research Institute

Lih-Yih Chiou

Tsai-Kan Chien

Chi-Ray Huang

Soon-Jyh Chang

Chien-Hung Tsai

Guan-Ying Huang

Kuen-Jong Lee

Chung-Ho Chen

Yu-Wei Lin

Chia-Min Lin

Wen-Yu Su

Ming-Hung Wu

Chang-Chia Lee

Wei-Shuo Ling

Jing-Cian Lin

Liang-Ying Lu

Yi-Sung Tsou

Chih-Hung Kuo

Kuan-Lin Wu

A memory system includes a plurality of first memory units, a plurality of read word lines, and a plurality of read bit lines. Each first memory unit of the plurality of first memory units includes a second memory unit, a first transistor coupled to the second memory unit, and a second transistor coupled to the second memory unit and the first transistor. Each read word line of the plurality of read word lines is coupled to a plurality of first transistors disposed along a corresponding row. Each read bit line of the plurality of read bit lines is coupled to a plurality of second transistors disposed along a corresponding column.

Memory system capable of performing a bit partitioning process and an internal computation process

A method for controlling a resistive random access memory (ReRAM) is proposed. The method calculates a number of a bit value of a data when the data is to be written to the resistive random access memory. Each bit of the data is flipped and the data is written to the ReRAM if the number of the bit value is greater than a half of a length of the data. The data as it original is written to the ReRAM if the number of the bit value is less than a half of the length of the data.

Method for controlling resistive random-access memory

An energy-efficient nonvolatile microprocessor includes a processing core, a nonvolatile flip-flop array, a set of nonvolatile interconnections, and a store-enable register. When a power source is recovered to a stable state, the processing core determines whether data of nonvolatile registers is not transmitted before power-off. If yes, the processing core executes programmable recovery entry decision to avoid recovery failures for different applications. The processing core has plural system states divided into programmer visible states and programmer invisible states. The nonvolatile interconnections are connected between the processing core and the nonvolatile flip-flop array. When the power source is unstable, the processing core only stores the programmer visible states into the nonvolatile flip-flop array and, at the same time, only stores the system states of the peripheral modules corresponding to the bits of the store-enable register that are set to be 'true' into the nonvolatile flip-flop array.

Energy-efficient nonvolatile microprocessor

A thermal simulation device for an integrated circuit according to the disclosure comprises a thermal analysis unit and a mesh size analysis unit. The thermal analysis unit performs a thermal analysis of the integrated circuit to obtain temperatures of the center point and boundary of each function block. The mesh size analysis unit determines the cell number in the mesh of each function block. The thermal analysis unit computes a temperature of the center point and boundary of each cell in every function block according to the temperatures of the boundary of each function block.

Thermal simulation device and method for integrated circuits

A non-volatile static random access memory has an operating mode, a data backup mode and a data restore mode. The non-volatile static random access memory includes a memory cell and a power saving module. The memory cell includes a latch, a set of latch switch units, a set of backup memory units, a set of backup activation units, a backup setting unit and a driving signal transmission unit. The power saving module includes a control switch unit, a backup determination unit and a restore switch unit. When backup data is different from data stored in the latch, a backup driving signal is generated by a node voltage of the backup memory units and outputted to a backup determination unit, which drives the backup setting unit to turn on according to the backup driving signal, so as to change the backup data in the backup memory units and ensure correct backup.

Non-volatile static random access memory

A memory comprised of a plurality of single port SRAM memory cells, each driven by two word lines in an asynchronous manner has a hold mode, a read mode and a write mode. Each of the single port SRAM memory cells includes a first write switch, a second write switch and a latch. The first write switch is electrically connected to a first word line and is turned on by a first turn-on signal transmitted by the first word line. The second write switch is electrically connected to a second word line and is turned on by a second turn-on signal transmitted by the second word line. When the memory is in the write mode, the second write switch is turned on by the second turn-on signal having a delay with respect to the first turn-on signal, thereby blocking the pseudo read of the unselected memory cell.

Single port SRAM memory cell driven by two word lines in asynchronous manner and memory employing the same

A memory cell includes a set of storage switch units, a set of memory units, a set of comparison switch units and a discharge switch unit. The storage switch units are turned on by a turn-on signal transmitted by a word line. The memory units receive and store write data transmitted by a bit line or a source line when the storage switch units are on under a write mode. The comparison switch units are turned on by comparison data transmitted by comparison lines under a search mode. The discharge switch unit is turned on by a detection voltage under the search mode when the comparison data transmitted by the comparison lines is different from the write data stored in the memory units, so that the reference signal transmitted to the comparator is redirected to a reference voltage. A content addressable memory using the memory cell is also provided.

Content addressable memory and memory cell thereof

A multi-point temperature sensing method for integrated circuit chips and a system of the same are revealed. The system includes at least one slave temperature sensor embedded at preset positions for measuring temperature of a block and a master temperature sensor embedded in an integrated circuit chip and electrically connected to each slave temperature sensor. Variations of the slave temperature sensor induced by variations of process, voltage and temperature are corrected by the master temperature sensor. Thus the area the temperature sensors required on the integrated circuit chip is dramatically reduced and the stability of the temperature control system is improved. The problem of conventional System-on-a-Chip that only a limited number of temperature sensors could be used due to the area they occupied can be solved.

Multi-point temperature sensing method for integrated circuit chip and system of the same

An adaptive data-retention-voltage regulating system for static random-access memory (SRAMs) is revealed. The system includes a power supply unit, a data-retention-voltage (DRV) monitor cell for monitoring static noise margin (SNM) of SRAM, a data loss detector for generating a data loss signal, and a dynamic regulating controller that receives the data loss signal for generating a refresh signal and a switch signal. The DVR monitor cell consists of a DRV monitor circuit mounted with a plurality of memory cells, a reset signal generating circuit for resetting the DRV monitor circuit, and an adaptive variation control circuit that generates noise bias according to leakage current to adjust reaction speed of the DRV monitor circuit correspondingly.

Adaptive data-retention-voltage regulating system for SRAM

An in situ pulse-based delay variation monitor that predicts timing errors caused by process and environmental variations is revealed. The monitor includes a sequential storage device having a mater storage device and a slave storage device, a transition detector that is electrically connected to a node set on an electrical connection pathway from a master storage device to the slave storage device, and a warning signal generator electrically connected to the transition detector. The transition detector receives output of the master storage device to form a warning area by delay buffer, and generates a pulse width output correspondingly according to transition of the data input. Thus the warning signal generator generates a warning signal according to logic action at the pulse width and the clock input when the data input reaches the warning area. Thereby timing errors caused by static process variations and dynamic environmental variations are predicted.

Growing community of inventors

Tainan, Taiwan

Lih-Yih Chiou