Cadence Design Systems, Inc.

Other

Lifeng Wu

Zhihong Liu

Jeong Yeol Choi

Alvin Chen

Bruce W McGaughy

Ping F Chen

Jingkun Fang

Jianlin Wei

I-Hsien Chen

Fuchen Mu

Nobufusa Iwanishi

Hirokazu Yonezawa

Yoshiyuki Kawakami

Yutao Ma

Norio Koike

Gang Zhang

Chune-Sin Yeh

Alvin I-Hsien Chen

Min-Chie Jeng

A method of determining a Negative Bias Temperature Instability (NBTI) effect that combines degradation and recovery for dynamic operation of an integrated circuit (IC) includes: specifying one or more parameters for a degradation model for the IC during a stressed portion of a voltage cycle; specifying one or more parameters for a recovery model for the IC during an unstressed portion of the voltage cycle; determining a degradation value for the voltage cycle from the degradation model; determining a recovery value for the voltage cycle from the recovery model; determining an NBTI value that combines the degradation value and the recovery value for the voltage cycle; and saving at least one value for the NBTI value.

Negative bias temperature instability in dynamic operation of an integrated circuit

Method and system are disclosed for modeling dynamic behavior of a transistor. The method includes representing static behavior of a transistor using a lookup table, selecting an instance of the transistor from the lookup table for modeling dynamic behavior of the transistor, computing a previous state of the instance using a non-quasi static analytical model, computing a variation in channel charge of the instance according to a rate of change in time, computing a current state of the instance using the previous state and the variation in channel charge, computing a modified terminal voltage that includes a dynamic voltage across a parasitic resistance at the terminal of the transistor according to the current state and previous state of the instance, and storing the modified terminal voltage in a memory device for modeling dynamic behavior of the transistor at the current state.

Method and system for simulating dynamic behavior of a transistor

The present invention is directed to a number of improvements in methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects. A plurality of different circuit stress times can be simulated within a single run. Different aging criteria may be used for different circuit blocks, circuit block types, devices, device models and device types. The user may specify the degradation of selected circuit blocks, circuit block types, devices, device models and device types independently of the simulation. Device degradation can be characterized in tables. Continuous degradation levels can be quantized. Techniques are also described for representing the aged device in the netlist as the fresh device augmented with a plurality of independent current sources connected between its terminals to mimic the effects of aging in the device. The use of device model cards with age parameters is also described. To further improve the circuit reliability simulation, a gradual or multi-step aging is used instead of the standard one step aging process. Many of these features can be embedded within the circuit simulator. A user data interface is also presented to implement these techniques and further allow users to enter their device models not presented in the simulator. For example, a proprietary model of, say, the substrate current in an NMOS could used be with a SPICE simulator employing a different model to simulate the aging of the circuit.

Hot carrier circuit reliability simulation

The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added. In an exemplary embodiment, only devices with minimum channel length have degraded models constructed. The present invention also allows the degradation of one device parameter to be determined based on an age value derived from another parameter. In yet another aspect, a degraded device is modeled as a fresh device with a voltage source connected to a terminal.

Hot-carrier device degradation modeling and extraction methodologies

The present invention is directed to methods for reliability simulations in aged circuits whose operation has been degraded through hot-carrier or other effects by allowing design rules on degradation to be included in the netlist. Once the hot-carrier circuit simulation is launched, the rules are checked and the reliability design rule violations are reported. The process can be performed on either the layout or schematic window. The design rule criteria can be any device parameter and can be expressed in absolute or relative terms. The criteria can be based on device type, model card name, instance geometry, or temperature. Additionally, values can be set prior to beginning the simulation.

Hot-carrier reliability design rule checker

The invention allows the inclusion of cross-talk coupling and other noise in circuit simulation by considering a resultant glitch in more detail than just its peak value. A set of parameters represents the noise, with an exemplary embodiment using a triangle approximation to a glitch based on a set of three parameters: the peak voltage value, the leading edge slope and the trailing edge slope. These values are then used as the input stimulus to a given cell instance in the network in which the resulting propagated noise values, also in a triangle approximation, are determined by a simulation. The results can be stored as a library so that, given the parameters of the input noise and the particular cell, a simulation can determine the propagated noise through a look-up process. To reduce the space requirements of the library, the dimensionality of the look-up tables can be reduced through the introduction of a set of auxiliary functions to offset error from this reduction.

Shape based noise characterization and analysis of LSI

The present invention presents techniques for considering whether the effects of cross-talk coupling and other noise exceed the noise tolerance of a circuit. One aspect of the present invention uses a set of parameters to represent this noise. An exemplary embodiment uses a triangle or trapezoidal approximation to a glitch based on a set of parameters: the peak voltage value, the width, the leading edge slope and the trailing edge slope. These values are then used as the input of a library to look up the corresponding noise tolerance parameter set values. In a variation, a set of formulae can provide the noise tolerance parameter set values. In an exemplary embodiment, the noise tolerance parameter set is taken to include the minimum peak value for the noise to be possibly harmful and the minimum width value for the noise to be possibly harmful.

Shape based noise tolerance characterization and analysis of LSI

An approach for simulating hot carrier effects in an integrated circuit (IC) at the circuit level includes generating a hot carrier library of delay data for each cell in the IC, using the hot carrier library data to generate a set of scaled timing data for the IC and using the scaled timing data with a IC performance simulator to simulate the IC operation. The scaled timing data is based upon the cell delay data and time-based switching activity of each cell in the IC.

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Fremont, CA, United States of America

Lifeng Wu