Hitachi Global Storage Technologies Netherlands B.v.

Other

International Business Machines Corporation

Hgst Netherlands, B.v.

Liesl Folks

Bruce David Terris

Bruce Alvin Gurney

Thomas Dudley Boone, Jr

John Edward Eric Baglin

Jordan Asher Katine

Robert Fontana

Stefan Maat

Neil Smith

Dieter Klaus Weller

Ernesto Esteban Marinero

Andrew John Kellock

Sylvia Helena Florez Marino

Michael Grobis

Koichi R Wago

Wenyu Chen

Ricardo Ruiz

Klaas Berend Klaassen

Mark Whitney Hart

Sergio Nicoletti

Kentaro Takano

Qing Zhu

Dan Saylor Kercher

According to one embodiment, a patterned magnetic storage medium is disclosed herein. The magnetic storage medium includes a pattern formed on a substrate. The pattern includes at least a first and second feature and an edge defined between the first and second features. Additionally, the magnetic storage medium includes a magnetic layer formed on the pattern. The magnetic layer includes grains separated by a non-magnetic segregant boundary. The segregant boundary is positioned above the edge of the pattern.

Substrate patterning in perpendicular storage media

One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.

High density spin torque three dimensional (3D) memory arrays addressed with microwave current

A three-dimensional nonvolatile memory array device includes a plurality of memory elements and a memory controller. The plurality of memory elements each have a stack of a plurality of bits, which in turn each include a magnetic free layer, a magnetic pinned layer, and a non-magnetic layer. The magnetic free layer is configured to alternate its magnetization orientation based on a radio frequency current being at a resonant frequency of the magnetic free layer and on a magnetic field being applied to the magnetic free layer. The magnetic pinned layer has a specific magnetization orientation. The non-magnetic layer is located in between the magnetic free layer and the magnetic pinned layer. The memory controller is in communication with each of the plurality of memory elements, and configured to write data to and read data from the plurality of bits in the memory elements.

Multilevel frequency addressable field driven MRAM

A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

Method for manufacturing an extraordinary magnetoresistive (EMR) device with novel lead structure

Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.

EMR sensor and transistor formed on the same substrate

An extraordinary magnetoresistive sensor (EMR sensor) having a lead structure that is self aligned with a magnetic shunt structure. To form an EMR sensor according to an embodiment of the invention, a plurality of layers are deposited to form quantum well structure such as a two dimensional electron gas structure (2DEG). A first mask structure is deposited having two openings, and a material removal process is performed to remove portions of the sensor material from areas exposed by the openings. The distance between the two openings in the first mask defines a distance between a set of leads and the shunt structure. A non-magnetic metal is then deposited. A second mask structure is then formed to define shape of the leads.

EMR magnetic sensor having its active quantum well layer extending beyond an over-lying semiconductor layer end with tab and lead structure for improved electrical contact

An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.

Extraordinary magnetoresistive (EMR) device with novel lead structure

A method and apparatus for write enable and write inhibit for high density spin torque three dimensional (3D) memory arrays.

Method and apparatus for write enable and inhibit for high density spin torque three dimensional (3D) memory arrays

An extraordinary magnetoresistive device EMR having a discontinuous shunt structure. The discontinuous shunt structure improves the linearity of response of the EMR device. The EMR device includes a EMR heterostructure that includes an EMR active layer. The heterostructure can include first, second and third semiconductor layers, with the second layer being sandwiched between the first and third layers. The middle, or second semiconductor layer provides a two dimensional electron gas. The heterostructure has first and second opposed sides, with a pair of voltage leads and a pair of current leads connected with the first side of the structure. The discontinuous shunt structure is connected with the second side of the structure and may be in the form of a series of discontinuous, electrically conductive elements, such as semi-spherical gold elements.

EMR structure with bias control and enhanced linearity of signal

A magnetoresistive (MR) sensor can be shaped using ion beam irradiation and/or implantation through a mask introduced between a MR structure and an ion source. The mask covers selected portions of the MR structure to define the track width of the sensor. Ion irradiation and/or implantation reduces the magnetoresistance of the unmasked portions while leaving the masked portion substantially unaltered. The mask can be a photoresist mask, an electron beam resist mask, or a stencil mask. Alternatively the mask may be part of a projection ion beam system. Track width resolution is determined at the mask production step. The edges of the sensor can be defined by a highly collimated ion beam producing an extremely straight transition edge, which reduces sensor noise and improves sensor track width control. Improved hard bias layers that directly abut the sensor may be used to achieve a suitable stability. A variety of longitudinal bias schemes are compatible with ion beam patterning.

Ion beam definition of magnetoresistive field sensors

A method for making a patterned magnetic recording disk uses patterned ion implantation of the disk substrate. Energetic ions, such as He, N or Ar ions, are directed to the disk substrate through a mask, preferably a non-contact mask. They are implanted into the substrate, and the process causes localized topographic distortions in the substrate surface. A magnetic layer is then deposited over the substrate in the conventional manner, such as by sputtering. The result is a disk with patterned magnetic regions that are raised above the substrate surface. Because these regions are elevated, they are closer to the recording head in the disk drive and can thus be individually recorded to form discrete magnetic bits. Depending on the type of substrate used, the ion implantation can cause either localized swelling to form pillars or localized compaction to form pits. The patches of magnetic material on the tops of the pillars, or on the substrate surface between the pits, form the discrete magnetic bits.

Patterned magnetic recording disk with substrate patterned by ion implantation

A patterned magnetic recording disk, i.e., a disk with discrete magnetically recordable regions that can function as discrete magnetic bits, is formed by ion irradiating a continuous magnetic film of a chemically-ordered alloy having a tetragonal crystalline structure through a patterned non-contact mask. The ions cause disordering in the film and produce regions in the film that have no magnetocrystalline anisotropy. The regions of the film not impacted by the ions retain their chemical ordering and magnetocrystalline anisotropy and thus serve as the discrete magnetic regions that can be recorded as individual magnetic bits. The chemically-ordered alloy is preferably Co (or Fe) and Pt (or Pd) with the c-axis of the tetragonal crystalline film oriented at an angle less than 45 degrees relative to the plane of the film, so that after patterning the discrete magnetic regions can be recorded by horizontal magnetic recording.

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Campbell, CA, United States of America

Liesl Folks