Etron Technology, Inc.

Lien-Sheng Yang

Jen-Shou Hsu

Shih-Hsing Wang

Ho-Yin Chen

Shi-Huei Liu

Tzu-Hao Chen

Te-Yi Yu

Wei-Jen Chen

Shu-Jen Wu

Min-Chih Chang

Yin-Ming Lan

Wei-Ju Chen

By inputting voltages to global word lines of a memory, and by detecting currents of corresponding global word lines, a relation function between the currents and the voltages can be generated, and connection defects on the global word lines can be determined according to various types of deviation of a relation curve corresponding to the relation function between the currents and voltages.

Method of detecting connection defects of memory and memory capable of detecting connection defects thereof

Utilize a pattern generator to write a predetermined logic voltage to each memory cell of a memory chip. Read a predetermined logic voltage stored in the memory cell. Compare the predetermined logic voltage stored in the memory cell with the predetermined logic voltage to determine if the memory cell is a good memory cell or not and store a determination result corresponding to the memory cell in a data latch of the memory chip. And determine if the memory chip is a good memory chip or not according to determination results of all memory cells of the memory chip stored in the data latch of the memory chip.

Method of performing a chip burn-in scanning with increased efficiency

Method for detecting word line defect includes activating a first word line for reading a first data pre-stored in the memory cell, suspending the first word line for a predetermined period and then writing a second data complementary to the first data into the memory cell, activating again the first word line for reading a third data from the memory cell, and comparing the second and the third data for determining if an electrical coupling path exists between the first word line and a second word line.

Word line defect detecting device and method thereof

A method detects if a word line of a memory array is broken. The method includes writing a first datum to a memory cell when coupling a corresponding word line to a voltage source, writing a second datum different from the first datum to the memory cell when the coupling between the corresponding word line and the voltage source is decoupled, reading the stored data of the memory cell, and determining if the word line is broken according to the read data, the first datum, and the second datum.

Method for detecting erroneous word lines of a memory array and device thereof

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Hsinchu, Taiwan

Lien-Sheng Yang