Chinese Academy of Sciences

Gm Global Technolgoy Operations, Inc.

Corning Incorporated

Shanghai Institute of Ceramics

Lidong Chen

Li Wang

Lin He

Xun Shi

Monika Backhaus-Ricoult

Jihui Yang

Xiaoya Li

Xiangyang Huang

Shengqiang Bai

Xugui Xia

Degang Zhao

Xihong Chen

Zhen Xiong

Wenqing Zhang

Gregory P Meisner

Pengfei Qiu

Jiong Yang

Yunshan Tang

Junfeng Fan

Ruiheng Liu

Huili Liu

Zhiqiang Gao

Shiqi Yang

Wenbin Zhang

Qingyu Yang

Wenging Zhang

Pengfuei Qiu

The present invention relates to a method for preparing a thermoelectric thick film. The method includes: determining a brittle-to-ductile transition temperature of a thermoelectric material; rolling the blocky thermoelectric material within a temperature range above the brittle-to-ductile transition temperature and below a melting point; parameters of the rolling being as follows: a linear speed of rollers is 0.01 mm/s to 10 mm/s, preferably 0.1 mm/s to 5 mm/s, and an amount of pressing each time of the rollers is controlled at 0.0005 mm to 0.1 mm, preferably 0.001 mm to 0.05 mm; repeating the rolling until a thermoelectric thick film with a specified thickness is obtained; and annealing the obtained thermoelectric thick film; a temperature of the annealing being 100° C. to 800° C., preferably 300° C. to 500° C., and a duration of the annealing being 10 to 500 hours, preferably 100 to 300 hours.

Method for preparing thermoelectric thick film

The present invention relates to a P-type high-performance thermoelectric material featuring reversible phase change, and a preparation method therefor. The thermoelectric material has a chemical composition of CuSeI, wherein 0&#x3c;x&#x2264;0.08. The method comprises: weighing elemental copper metal, elemental selenium metal, and cuprous iodide according to the molar ratio (2&#x2212;x):(1&#x2212;x):x, and packaging them in a vacuum; raising the temperature to 1150-1170&#xb0; C. in stages and performing a melting treatment for 12-24 hours; lowering the temperature to 600-700&#xb0; C. in stages and then performing an annealing treatment for 5-7 days, the substances being cooled to room temperature in a furnace after the annealing treatment; and performing pressure sintering at 400-500&#xb0; C.

P-type high-performance thermoelectric material with reversible phase change, and preparation method therefor

A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material power, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a &#x3c0; shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti. The present invention simplifies fabricating procedures, reduces the cost and avoids adverse impacts due to exposing related elements to heat and pressure for a second time.

Thermoelectric device, electrode materials and method for fabricating thereof

A composite material comprises a filled skutterudite matrix of formula (I) ICoSbin which (I) represents at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, 0.05&#x2266;y&#x3c;1; and GaSb particles within the filled skutterudite matrix, wherein the composite material comprises 0.05-5 mol % GaSb particles. Compared with conventional materials, the composite material exhibits a substantially increased Seebeck coefficient, a slightly decreased overall thermal conductivity, and a substantially increased thermoelectric performance index across the whole temperature zone from the low temperature end to the high temperature end, as well as a greatly enhanced thermoelectric efficiency.

Filled-skutterudite composite material and method of preparing the same

A process for making a composite material and the composite materials having thermoelectric properties.

Thermoelectric composite material and method of producing the same

A method of improving the thermoelectric figure of merit (ZT) of a high-efficiency thermoelectric material is disclosed. The method includes the addition of fullerene (C) clusters between the crystal grains of the material. It has been found that the lattice thermal conductivity (&#x3ba;) of a thermoelectric material decreases with increasing fullerene concentration, due to enhanced phonon-large defect scattering. The resulting power factor (S/&#x3c1;) decrease of the material is offset by the lattice thermal conductivity reduction, leading to enhanced ZT values at temperatures of between 350 degrees K and 700 degrees K.

Method of improving thermoelectric figure of merit of high efficiency thermoelectric materials

A method for fabricating thermoelectric device is provided. The method comprises placing a first electrode in a die, forming a first interlayer on an upper surface of the first electrode; positioning a separating plate on an upper surface of the first interlayer to divide an inner space of the die into a plurality of cells, and depositing a first thermoelectric material on the first interlayer within a first fraction of the cells, and depositing a second thermoelectric material on the first interlayer within a second fraction of the cells, sintering the die contents, and removing the separating plate after sintering to obtain a &#x3c0; shaped thermoelectric device.

Fabrication method for thermoelectric device

A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula ATMTM. . . TMMX. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM, TM, and TMare independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y, y, yand Z are actual compositions of TM, TM, TM, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8&#xb7;q&#x2212;|&#x394;q|y&#x2212;|&#x394;q|y&#x2212; . . . &#x2212;|&#x394;q|y, wherein qis a charge state of A, and wherein &#x394;q, &#x394;q, &#x394;qare, respectively, the nominal charge state of the first, second, and n-th TM.

Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure

A method of fabricating a CoSb-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.

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Shanghai, China

Lidong Chen