Chang Gung University

Uni Light Technology Inc.

Liann-Be Chang

Hsien-Chin Chiu

Yu-Lin Lee

Chen Hui Xu

Chao-Sung Lai

Kun Xu

Ming-Jer Jeng

Li-Hsin Kuo

Shiue-Ching Chiuan

Yunyun Zhang

Kuo-Ling Chiang

How-Wen Chien

Li-Yuan Chang

Jiun Yuh Chen

Wei-Hsien Lee

Jun-Yui Chen

Li-Zen Hsieh

Po-Chuan Chen

Che-Kai Lin

Yuan-Chang Huang

Chia-Yi Yen

Chung-Wen Chen

An apparatus of preventing ESD and EMP coupled between a signal input and a signal output is provided with a first diode of forward bias including a positive terminal and a negative terminal connected to the signal input and ground respectively; and a first diode of reverse bias including a negative terminal and a positive terminal connected to the signal input and the ground respectively. The semiconductor is a diode including a p-type semiconductor region made of semiconductor material having a predetermined band gap and an n-type semiconductor region made of semiconductor material having a predetermined band gap. The predetermined band gap is greater than 3 eV. The diode operates in forward bias to discharge current generated by ESD and/or EMP. A method of preventing ESD and EMP is also provided.

Apparatus of preventing ESD and EMP using semiconductor having a wider band gap and method thereof

An novelly designed gas discharge tube (GDT) comprising at least two electrodes and at least one hollow insulating ring fastened to at least one of the electrodes, wherein the hollow insulating ring has an inductive property or a variable resistance property, thereby the new gas discharge tube can provide another possibility of a circuit design.

Gas discharge tubes for surcharge suppression

A method of hybrid stacked Flip chip for a solar cell onto which semiconductor layers of different materials are stacked in the Flip chip technology to solve the problem of lattices mismatch between the layers for further increase of the efficiency of solar cell.

Method of hybrid stacked flip chip for a solar cell

A light-assisted biochemical sensor based on a light addressable potentiometric sensor is disclosed. The light-assisted biochemical sensor comprises a semiconductor substrate and a sensing layer, which are used to detect the specific ion concentration or the biological substance concentration of a detected solution. Lighting elements fabricated directly on the back surface of the semiconductor substrate directly illuminate the light to the semiconductor substrate, so as to enhance the photoconduction property of the semiconductor substrate. And then, the hysteresis and the sensing sensitivity of the light-assisted biochemical sensor are respectively reduced and improved. In addition, due to its characteristics of integration, the light-assisted biochemical sensor not only reduces the fabrication cost but also has portable properties and real-time detectable properties. As a result, its detection range and the application range are wider.

Light-assisted biochemical sensor

An LED light bulb, mainly comprising: an LED module, provided with a first connection portion; a circuit driving module, provided with a second connection portion, said first connection portion is connected to said second connection portion; and a lamp hood covered over said LED module. As such, said LED module or said circuit driving module can be replaced readily when they are found broken down, without the need to discard entire set of LED light bulb, hereby eliminating unnecessary waste, in achieving both cost effectiveness and environment protection.

Light-emitting-diode (LED) light bulb

A three dimensional (3-D) light-emitting-diode (LED) stack and method of manufacturing the same, comprising: a substrate; at least a first LED, stacked on said substrate; and at least a second LED, stacked on said first LED, such that energy gap of said first LED is smaller than energy gap of said second LED. In said stack mentioned above, a material of larger energy gap capable of emitting light of shorter wavelength can be penetrated by lights emitted by another material of smaller energy gap capable emitting lights of longer wavelength, such that lights are mixed together and then emitted, and said materials are put into a three dimensional stack arrangement, to form a brand new light emitting device of mixed light, so as to emit lights as required.

Three dimensional light-emitting-diode (LED) stack and method of manufacturing the same

A bond type flip-chip light-emitting structure and method of manufacturing the same. Firstly, form a positive electrode and a negative electrode on an epitaxy layer. Next, deposit an insulation layer on parts of the positive electrode and negative electrode, to expose respectively a positive electrode via hole and a negative electrode via hole. Then, form a bonded metal layer on the insulation layer, the positive electrode via hole, and the negative electrode via hole, so that the positive electrode and the negative electrode are on a same plane by means of the bonded metal layer. Finally, on a substrate, bond the first metal layer and the second metal layer onto the corresponding first bonded metal unit and the second bonded metal unit of the bonded metal layer, to form into shape, thus realizing a bond type flip-chip light-emitting structure.

Bond type flip-chip light-emitting structure and method of manufacturing the same

The present invention discloses a cascade EMP protection circuit, which comprises an LEMP protection circuit and a fast-response protection circuit, wherein a symmetric capacitive varactor element is cascaded to the path of signal transmission. Thereby, the present invention can protect electronic devices against LEMP or EMP released by an electronic weapon (NEMP, HEMP, or PEMP).

Cascade electromagnetic pulse protection circuit for high frequency application

An electromagnetic pulse protection circuit having wave filtering functions, composed of an inductor free slow response protection circuit and a fast response protection circuit, and a filter is series-connected on a signal transmission route, and is utilized to provide impedance in effectively preventing electromagnetic pulses caused by lightning (LS) or other electronic weapon (NEMP, HEMP, PEMP) interferences. In addition, it is capable of suppressing electromagnetic pulses at specific frequencies, thus, raising the capability of electronic elements in resisting against electromagnetic pulses. Furthermore, said filter is made of high-temperature-super-conduction (HTSC) material, so that when said HTSC material of said filter is subject to a sudden infusion or invasion of said electromagnetic pulses, it is switched to a high impedance state in a very short period of time in effectively restricting currents passing through said filter, hereby avoiding the damages of a communication system.

Electromagnetic pulse protection circuit having wave filtering capability

An EMP protection circuit with a counter has a surge protection circuit capable of suppressing EMP, and also use an extra counting circuit for sensing light emission or variation of magnetic force of the surge protection circuit to count the action times of the surge protection circuit, thereby warning that the surge protection circuit has reached its time-limit of use and has to be replaced. In this way, various kinds of electronic products can be more perfectly protected to avoid higher loss.

Electro-magnetic pulse protection circuit with a counter

A multi-layer structure with a transparent gate includes a MHEMT device structure comprising a GaAs substrate, a Schottky layer and a cap layer formed on the Schottky layer; a transparent gate formed on the Schottky layer being an indium tin oxide, ITO; and a drain and a source formed on the cap layer. Moreover, the MHEMT device structure includes a graded buffer, a buffer layer, a first spacer layer, a channel layer, and a second spacer layer formed between the GaAs substrate and the Schottky layer in a stacked fashion. The multi-layer structure is a transparent gate HEMT employing indium tin oxide which can make HEMT more sensitive to the light wave.

Multi-layer structure with a transparent gate

This invention relates to a method of sulfuration treatment for InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), and the sulfuration treatment is applied to the InAlAs/InGaAs MHEMT for a passivation treatment for Gate, in order to increase initial voltage, lower the surface states and decrease surface leakage current, which makes the MHEMT work in a range of high current density and high input power.

Method of sulfuration treatment for a strained InAlAs/InGaAs metamorphic high electron mobility transistor

A method of manufacturing an LED of high reflectivity includes forming a substrate; depositing an n-type GaN layer on the substrate; depositing an active layer on a first portion of the n-type GaN layer; attaching an n-type metal electrode to a second portion of the n-type GaN layer; depositing a p-type GaN layer on the active layer; forming a metal reflector on the p-type GaN layer; attaching a p-type metal electrode to the metal reflector; and attaching the p-type metal electrode and the n-type metal electrode to an epitaxial layer respectively. The metal reflector includes a transparent layer, an Ag layer, and an Au layer. The transparent layer and the Ag layer are formed by annealing in a furnace, and the Au layer is subsequently coated on the Ag layer.

Method of manufacturing an LED

A hollow wire for enhancing the wires used in a Liquid Crystal Display includes hollow portions so as to increase the cross sectional area and reduce the resistance. An isolation layer with a low dielectric constant is filled in the hollow portions so as to reduce the clecti-ic capacities and maintain the operation efficiency. The isolation layer can be filled in the perpendicularly crossing area between the information lines and gate matrixes to reduce the electric capacities and maintain the operation efficiency. A method for making the hollow wire is also disclosed.

Hollow wire and method for making the same

A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.

Growing community of inventors

Tao-Yuan, Taiwan

Liann-Be Chang