Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Liangfen Zhang

Yuanchun Wu

Yuanjun Hsu

Xiaoxing Zhang

Jangsoon Im

Wei Wei

Meng Zhang

Chuan Liu

Poyen Lu

Changcheng Lo

Letao Zhang

Shuichih Lien

Boru Yang

Changdong Chen

Hoising Kwok

Man Wong

Rongsheng Chen

A display panel and a display device are provided. Each includes a light-emitting device layer including a first conductive layer, an organic layer, and a second conductive layer. The first conductive layer includes a first electrode electrically connected to a pixel driving circuit. The second conductive layer includes a second electrode disposed on a first portion located on the organic layer. The auxiliary structure includes a base, an auxiliary electrode, and an auxiliary portion. A cross-section of the base is trapezoidal in shape. The second electrode exceeds the first portion and is connected to the auxiliary electrode.

Display panel and display device

A color filter substrate, a manufacturing method thereof, and a display panel are provided. The color filter substrate includes a first substrate, a color resist layer, an overcoat layer, and a quantum dot layer, which are sequentially stacked. The color resist layer includes a plurality of sub-color resist layers with different colors arranged along a second direction, and there is no black matrix disposed between two adjacent sub-color resist layers. The quantum dot layer is divided into a plurality of quantum dot areas arranged along the second direction. A plurality of banks are disposed between and correspond to two adjacent quantum dot areas, and the banks are black.

Color filter substrate, manufacturing method thereof, and display panel

An organic light emitting diode display panel in this disclosure comprises a base substrate, an array layer disposed on the base substrate, and a planarization layer disposed on the array layer. The OLED display panel further comprises anodes disposed on the planarization layer, and a pixel definition layer located between the anodes adjacent to each other. A luminescent layer, a cathode, and an encapsulation layer are provided on the anodes. A preparation material of the pixel definition layer is a light-shading material. By the pixel definition layer made of a light-shading material, the light shading effect of the OLED display panel is greatly enhanced, and the influence of the lateral light leakage of the OLED display panel on the TFT device is prevented.

Organic light emitting diode panel and method of preparing the same

The present invention provides an organic light-emitting diode (OLED) display panel including a substrate, a thin-film transistor, an insulating layer, an auxiliary electrode, an organic light-emitting layer, a shielding stage, and a common electrode. The common electrode is electrically connected to the auxiliary electrode. The shielding stage includes at least one organic material layer. An angle between the shielding stage and the substrate is a threshold value.

OLED display panel and manufacturing method thereof

A color filter substrate and a fabricating method thereof are provided. The color filter substrate has a pixel definition layer having a first pixel-defining structure and a second pixel-defining structure, and the second pixel-defining structure encapsulates the first pixel-defining structure. The pixel definition layer enhances its structural support strength while ensuring its own shading property and hydrophobicity, so that it can reach a target height, and an undercut phenomenon is less likely to occur.

Color filter substrate and fabricating method thereof

The present invention provides a quantum dot display panel and a manufacturing method thereof. The present invention includes a pixel definition layer on a surface of a color film substrate, a quantum dot photoconversion film located on pixel definition regions of the pixel definition layer, and a blue light display device located under the quantum dot photoconversion film. An uplift layer and a light-shielding layer are arranged in the pixel definition layer to ensure that a thickness of the pixel definition layer is greater than or equal to 6 &#x3bc;m, which is beneficial to uniform curing of quantum dots in the quantum dot photoconversion film.

Quantum dot display panel and manufacturing method thereof

The present disclosure provides an OLED display and a method for manufacturing the same. The method comprises steps of forming a planarization layer on the auxiliary electrode, wherein the planarization layer includes an opening; forming a transparent conductive layer and a pixel defining layer on the planarization layer, and patterning the same, such that both the transparent conductive layer and the pixel defining layer is located above the opening to shield a side of the opening that is adjacent to a non-display area; and forming a cathode electrode on the pixel defining layer by evaporation, such that the cathode electrode partially covers a side of the auxiliary electrode.

OLED display and method for manufacturing same

The embodiments of the disclosure provides a method of manufacturing an OLED panel and an OLED panel. The method includes: forming an anode electrode connected to a source electrode of a TFT and a bridge electrode connected to an auxiliary electrode on a TFT substrate; forming a plurality of metal protrusions on the bridge electrode, the surfaces of the metal protrusions having a plurality of corners; sequentially forming an electron transport layer, an electron injection layer and a cathode electrode on the bridge electrode and the metal protrusions; and applying a voltage on the auxiliary electrode or the bridge electrode to burn a portion of the electron transport layer and a portion of the electron injection layer corresponding to the corners of the metal protrusions to connect the cathode electrode and the auxiliary electrode.

Method of manufacturing an OLED panel and OLED panel

The present disclosure provides a display panel and a manufacturing process of the display panel. The manufacturing process of the display panel includes: successively depositing a plurality of thin-film layers on an auxiliary electrode layer, the compactness of a single thin-film layer among the plurality of thin-film layers gradually increasing from bottom to top; forming a preset pattern by the plurality of thin-film layers having a same width; dry-etching the plurality of thin-film layers so that the width of a single thin-film layer among the plurality of thin-film layers gradually increases from bottom to top, to form a plurality of cathode separators having an inverted trapezoid shape. The manufacturing process of the cathode separator is highly stable.

Display panel and manufacturing process thereof

The disclosure provides a hybrid CMOS device and a manufacturing method thereof. The manufacturing method of the hybrid CMOS device according to the disclosure uses a low-temperature polysilicon to prepare an active layer of a PMOS transistor, and simultaneously uses a metal oxide semiconductor to prepare an active layer of an NMOS transistor. The two types of semiconductor materials are used in combination to form a hybrid CMOS device. Compared with the existing method for producing an active layer of the PMOS transistor by using a two-dimensional carbon nanotransister material or an organic semiconductor material, the hybrid CMOS device obtained according to the disclosure has superior electrical properties.

Hybrid CMOS device and manufacturing method thereof

The invention provides a TFT backplane and manufacturing method thereof, wherein the TFT backplane comprises a substrate (); a gate () and a first metal electrode () formed on the substrate (); a gate insulating layer () formed on the substrate () and covering the gate () and the first metal electrode (), the gate insulating layer () on the first metal electrode () having a thickness less than thickness of the gate insulating layer () on the gate (); an etch stop layer (ESL) () on the gate insulating layer () and a second metal electrode () on the ESL (). Only a portion of the gate insulating layer deposited on the first metal electrode is etched away, and the first metal electrode always protects the gate insulating layer, so that the first metal electrode is not damaged by the etching gas, favorable for the final storage capacitor.

TFT backplane and manufacturing method thereof

The present invention provides a manufacture method of a polysilicon thin film and a polysilicon TFT structure. The manufacture method of the polysilicon thin film comprises: step 1, providing a substrate (), and forming the polysilicon thin film () on the substrate (), and a thickness of the polysilicon thin film () accords with a required thickness of manufacturing a semiconductor element; step 2, implementing silicon self-ion implantation to the polysilicon thin film (), and an implantation volume of silicon ion is lower than a measurement limit for making polysilicon be decrystallized. The manufacture method of the polysilicon thin film makes the implanted silicon ion to form interstitial silicon to move to the polysilicon grain boundary, which can reduce the defect concentration of the polysilicon grain boundary and improve the quality of the polysilicon thin film. The present invention provides a polysilicon TFT structure, of which the island shaped semiconductor layer is manufactured by the polysilicon thin film after low volume silicon self-ion implantation, which can reduce the grain boundary potential barrier in the activation stage, and enlarge the carrier mobility, and increase the on state current, and decrease the threshold voltage, and improve the TFT property.

Manufacture method of polysilicon thin film and polysilicon TFT structure

The present invention provides a method for manufacturing an LTPS TFT substrate structure and a structure of an LTPS TFT substrate. The method for manufacturing the LTPS TFT substrate structure according to the present invention provides patterns of a thermally conductive electrical-insulation layer that are of the same size and regularly distributed under a buffer layer of a driving TFT area to absorb heat in a subsequent excimer laser annealing process so as to speed up the cooling rate of amorphous silicon to form crystal nuclei that gradually grow up in the annealing process. Since the thermally conductive electrical-insulation layer is made up of regularly distributed and size-consistent patterns, crystal grains of a polycrystalline silicon layer located in the driving TFT area show improved consistency and homogeneity and the grain sizes are relatively large to ensure the consistency of electrical property of the driving TFT. The structure of the LTPS TFT substrate structure according to the present invention includes patterns of a thermally conductive electrical-insulation layer that are regularly distributed under a buffer layer of a driving TFT area and have the same size, so that crystal grains of a polycrystalline silicon layer located in the driving TFT area show improved consistency and homogeneity and the grain sizes are relatively large and thus, the electrical property of the driving TFT is consistent.

Growing community of inventors

Shenzhen, China

Liangfen Zhang