Honeywell International Inc.

International Business Machines Corporation

Liang Zeng

Ya Qun Liu

Hong Min Huang

Hui Wang

Bright Zhang

Wei Jun Wang

Liqiang Zhang

Zhe Ding

Xiaoxia Wang

Yuan Quan

DaSheng Fang

Jingyang Zhang

Wei Chang

A thermal interface material includes at least one polymer, at least one thermally conductive filler; and at least one ion scavenger. In some embodiments, the ion scavenger is a complexing agent selected from the group consisting of: nitrogen containing complexing agents, phosphorus containing complexing agents, and hydroxyl carboxylic acid based complexing agents.

Thermal interface material with ion scavenger

Provided is a compressible thermal interface material including a polymer, a thermally conductive filler, and a phase change material. A formulation for forming a compressible thermal interface material and an electronic component including a compressible thermal interface material are also provided.

Compressible thermal interface materials

The present invention relates to a semiconductor manufacturing method, a mask forming method and a semiconductor structure. According to one aspect of the invention, a semiconductor manufacturing method is provided, comprising: forming a metal wiring layer on a semiconductor substrate, the metal wiring layer comprising dielectrics and metal wires and metal FILLs within the dielectrics; removing the metal FILLs in the metal wiring layer completely to form the metal wiring layer without the metal FILLs. With the technical solution according to embodiments of the invention, undesirable influences due to metal FILLs will be eliminated.

Removing metal fills in a wiring layer

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Shanghai, China

Liang Zeng